单片RF lsi的低电压操作RF CMOS-MEMS开关

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346891

K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii

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引用次数: 23

摘要

本文介绍了一种集成了射频MEMS开关和CMOS控制电路的新型射频CMOS-MEMS开关。制作了单极8通射频CMOS-MEMS开关，实现了开关在3.3 V电源电压下的工作。该开关在晶圆级用薄膜封装，以防止在封装过程中损坏。实验结果证实，该开关具有超过10亿次循环的机械可靠性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs

This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles

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2006 International Electron Devices Meeting

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