局部存储、多级SONOS闪存中随机电报噪声引起的读电流不稳定

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346820

S. Gu, C.W. Li, Tahui Wang, W.P. Lu, K.C. Chen, J. Ku, Chih-Yuan Lu

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引用次数: 15

摘要

研究了局域存储多级氮化物快闪存储器(SONOS)中随机电报噪声(RTN)引起的程序/擦除循环应力引起的读电流波动。我们的研究表明，局部电荷存储显著提高了RTN。RTN的振幅在多层细胞的不同程序水平上是不同的。对RTN引起的读电流分布的加宽进行了表征和建模。提高底氧化物的稳健性可以减少读电流的波动

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Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory

Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations

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2006 International Electron Devices Meeting

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