Semiconductor Lasers Advanced Devices and Applications最新文献_第4页

Numerical Analysis of Distortions in Directly Modulated Semiconductor Lasers in the Presence of Weak Optical Feedback 弱光反馈下直接调制半导体激光器畸变的数值分析

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.3

M. K. Haldar, F. Mendis, J. Wang

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Miniature Lidar using Diode Lasers Modulated with PN Codes 用PN码调制二极管激光器的微型激光雷达

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tub.1

J. Abshire, J. Rall

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A Correct Way to Model Arbitrary Complex Distributed FeedBack (DFB) Lasers in The Above Threshold Regime 在阈值以上区域建立任意复杂分布反馈(DFB)激光器模型的正确方法

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.4

W. Hsin

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High Power (>1 W) Semiconductor Lasers 高功率(> 1w)半导体激光器

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tuc.1

R. Lang, R. Parke, D. Mehuys, S. O’Brien, J. Major, J. Osinski, G. Harnagel, F. Shum, D. Welch

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The Reduction of the Frequency Chirp of Two Section Distributed Feedback laser without Suppressing Spatial Hole Burning 在不抑制空间烧孔的情况下降低两段分布反馈激光器的频率啁啾

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.ma.4

J. Feng, T. Chen, B. Zhao, A. Yariv

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Simultaneous Demultiplexing and Wavelength Conversion of NRZ Optical Signals using a Side-Injection-Light-Controlled Bistable Laser Diode 利用侧注入-光控双稳激光二极管实现NRZ光信号的同时解复用和波长转换

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tua.1

T. Kurokawa, K. Nonaka

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Stimulated Raman Spectroscopy with a Modulated External Cavity Diode Laser 调制外腔二极管激光器的受激拉曼光谱

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.mb.3

C. S. Wood, S. C. Bennett, D. Cho, C. Wieman

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Spectral Properties of an AlGaAs MOPA Laser Under Large Signal Modulation of the Oscillator or the Amplifier 大信号调制下AlGaAs MOPA激光器的光谱特性

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tuc.4

M. Krainak, D. Cornwell, Valerie Dutto, A. Yu, S. O’Brien

引用次数: 1

Low threshold current vertical-cavity surface-emitting lasers with enhanced resistance to heating 具有增强的耐热性的低阈值电流垂直腔表面发射激光器

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tud.4

G. Yang, M. MacDougal, P. Dapkus

{"title":"Low threshold current vertical-cavity surface-emitting lasers with enhanced resistance to heating","authors":"G. Yang, M. MacDougal, P. Dapkus","doi":"10.1364/slada.1995.tud.4","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.4","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSEL's) fabricated by selective oxidation are attractive to achieve ultralow threshold currents [1-3]. Efficient heat dissipation, along with low threshold, is critical for uses as optical interconnects where massive integration is required. In this paper, we report an ultralow threshold of 8.7 µA and a high output power over 1.9 mW in single quantum well VCSEL's fabricated by selective oxidation from an all epitaxial structure with intracavity p-contact layers grown by metalorganic chemical vapor deposition. The design of this structure is optimized for low thermal resistance by using distributed Bragg reflectors (DBR's) composed completely of binary materials. Fig.l shows a schematic cross-section of the fabricated VCSEL's. The epitaxial structure consists of a 30-pair n-doped AlAs/GaAs quarter-wave stacks, an Al0.22Ga0.78As/GaAs/In0.2Ga0.8As resonant λ-cavity, p-doped contact layers, and a 22-pair undoped AlAs/GaAs quarter-wave stacks. The p-doped contact layers are formed from a 0.25 λ AlAs current constriction layer and a 0.75 λ GaAs intracavity contact layer. After growth, the top DBR is selectively wet etched into 14 and 5 µm square mesas down to the p-type GaAs contact layer. Then, 50 µm square mesas, whose centers coincide with the centers of the top mesas, are formed by wet chemical etching. Current flow apertures of 10 and ~3 µm are formed below the 14 and 5 µm square top mirrors, respectively, by selective oxidation.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117058061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Diode Lasers for Industrial Spectroscopy 工业光谱学用二极管激光器

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.mb.1

A. Stanton, D. S. Bomse, J. A. Silver, D. Hovde, D. Kane, D. Oh, M. Paige

{"title":"Diode Lasers for Industrial Spectroscopy","authors":"A. Stanton, D. S. Bomse, J. A. Silver, D. Hovde, D. Kane, D. Oh, M. Paige","doi":"10.1364/slada.1995.mb.1","DOIUrl":"https://doi.org/10.1364/slada.1995.mb.1","url":null,"abstract":"Visible/near-infrared diode lasers are well-suited for use as spectroscopic light sources in detection of a wide variety of gases by measurement of optical absorption. The high spectral resolution of these devices permits the selective detection of targeted species, while their characteristics of relatively low cost, room temperature operation, and compatibility with fiber optics make them attractive for instrument development. The nominal range of available wavelengths (presently ~0.63 −~2.0 μm for commercially available devices that operate at room temperature) includes absorption bands of numerous gas species that need to be monitored to meet various industrial objectives (e.g. process control, emissions monitoring, toxic gas detection, etc.) While the molecular absorption bands in this spectral region consist mostly of relatively weak overtone or combination bands (some electronic bands are accessible at the shorter wavelengths), detection sensitivities of about 1 ppm-meter or better can be achieved for many gases using frequency or wavelength modulation techniques that permit routine measurement of small optical absorbances.1-2 Sub-ppm measurement sensitivities are easily achieved using simple optical multipass designs if necessary. A partial list of industrially significant gases that may be measured by this approach includes oxygen, water vapor, methane, acetylene, carbon monoxide, carbon dioxide, hydrogen halides, ammonia, hydrogen sulfide, and nitrogen oxides (both NO and NO2). Diode laser- based instruments for measurement of some of these species in process control or environmental monitoring applications are now commercially available.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116889607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0