Semiconductor Lasers Advanced Devices and Applications最新文献_第3页

Development of a Tritium Powered Semiconductor Laser 氚动力半导体激光器的研制

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.10

H. Ruda, L. Jȩdral, L. Mannik

引用次数: 0

Efficiency and Spectral Properties of Integrated Optoelectronic Laser-Diode-Based RF Frequency Mixers 基于集成光电激光二极管的射频混频器的效率和频谱特性

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.1

E. Avrutin, I. Thayne, D. Barrow, J. Marsh, E. Portnoi, V. Gorfinkel

{"title":"Efficiency and Spectral Properties of Integrated Optoelectronic Laser-Diode-Based RF Frequency Mixers","authors":"E. Avrutin, I. Thayne, D. Barrow, J. Marsh, E. Portnoi, V. Gorfinkel","doi":"10.1364/slada.1995.tue.1","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.1","url":null,"abstract":"Frequency up/down conversion of optically transmitted RF signals may be useful for a number of microwave-over-fibre applications. In the earlier works [1-2], we have proposed to perform such conversion by means of operating passively Q-switched (self-pulsing) or passively mode locked semiconductor laser diodes (LDs) as integrated optoelectronic frequency mixers, i.e. as a local oscillator and a mixing element integrated within one device. Theoretical calculation proved the feasibility of RF frequency conversion due to parametric effects in such LDs. The calculations considered the input signal applied to a laser as either an electrical signal (optoelectronic scheme) or an RF modulated optical signal (all-optical scheme), the frequency-converted output being in the form of a modulated stream of optical pulses, convenient for further transmission, with an electrical signal as a by-product. In [3], optoelectronic up-conversion has been performed using self-pulsating lasers with subcarrier modulation in optical communications in view. The results of both [1-2] and [3] experimentally demonstrate the feasibility of frequency mixing in GHz range using self-pulsing lasers, but little study has been performed so far of the mixing efficiency, and the spectral properties of the device have been only studied theoretically [2] for the case of mode locked extended-cavity lasers. Here, we investigate, in more detail, the issue of the efficiency of the optoelectronic frequency conversion in dependency of frequency (in different frequency ranges) and intensity of the modulation signal for monolithic cavity Q-switched and mode locked lasers.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134532969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical and Experimental Study on the Temperature Sensitivity of High-Efficiency 1.3-μm InP-Based Strained MQW Lasers 基于1.3 μm inp的高效应变MQW激光器温度灵敏度的理论与实验研究

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.wa.3

S. Seki, H. Oohasi, H. Sugiura, T. Hirono, K. Yokoyama

引用次数: 0

Lasing characteristics of pillar-type microcavity lasers 柱型微腔激光器的激光特性

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.17

H. Yoshida, T. Tezuka, S. Nunoue

引用次数: 0

Robust and Wavelength Insensitive Performance of Selectively Oxidized Vertical-Cavity Lasers 选择性氧化垂直腔激光器的鲁棒性和波长不敏感性能

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tud.7

K. Choquette, R. P. Schneider, K. Lear, M. Crawford, K. Geib, J. Figiel, R. Hull

{"title":"Robust and Wavelength Insensitive Performance of Selectively Oxidized Vertical-Cavity Lasers","authors":"K. Choquette, R. P. Schneider, K. Lear, M. Crawford, K. Geib, J. Figiel, R. Hull","doi":"10.1364/slada.1995.tud.7","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.7","url":null,"abstract":"The unique properties of vertical-cavity surface emitting lasers (VCSELs), such as circular output beam, single longitudinal mode, and 2-dimensional array capability, make them promising light sources for a variety of applications, including optical data links, data storage, display and printing systems. Moreover, on-wafer testing and compatibility with traditional integrated circuit fabrication technologies make VCSEL manufacture feasible and potentially inexpensive. Recently, VCSELs fabricated using \"wet\" oxidation1 have demonstrated the lowest threshold current (91µA),2 lowest threshold voltage (45mV above photon gap),3 and highest power conversion efficiency (52%)4 ever reported in VCSELs. The latter two results were obtained from an all semiconductor VCSEL structure that utilizes selective oxidation to form buried oxide layers. The low index oxide layers form current apertures sandwiching the active region to efficiently confine injected carriers as well as transversely confine the emitted photons. In this paper we show that the fabrication uniformity we have obtained using our selective oxidation process can reproducibly yield high performance VCSELs that are attractive for potential applications. In addition, these lasers exhibit high performance over a wide emission wavelength range from a given wafer. Finally, our selectively oxidized device structure is demonstrated to be robust and amenable to a variety emission wavelengths, currently extending from the infra-red to visible.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130106849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

TE/TM polarization switching with single longitudinal mode operation in GaAs/AlGaAs MQW DFB Lasers GaAs/AlGaAs MQW DFB激光器单纵模TE/TM偏振开关

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tua.3

T. Ouchi, Masao Majima, Sotomitsu Ikeda, T. Ono, M. Uchida, Yuichi Handa

引用次数: 0

Selected Multi-Wavelength Oscillation of a Semiconductor Laser in an External Cavity 半导体激光器在外腔中的选择多波长振荡

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.8

Ching-Fuh Lin

引用次数: 0

A high-power (~2W) external-cavity cw diode laser tunable from 960 - 980 nm 高功率(~2W)外腔连续波二极管激光器，可调谐范围960 - 980nm

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tuc.3

Sushma Gupta, R. Jones, R. Jain, J. Walpole

{"title":"A high-power (~2W) external-cavity cw diode laser tunable from 960 - 980 nm","authors":"Sushma Gupta, R. Jones, R. Jain, J. Walpole","doi":"10.1364/slada.1995.tuc.3","DOIUrl":"https://doi.org/10.1364/slada.1995.tuc.3","url":null,"abstract":"Wavelength-tunable high-power diode lasers with narrow-line widths and diffraction-limited outputs are needed for numerous applications including diode-based nonlinear frequency conversion, coherent radar, coherent free-space communications, and spectroscopic applications. The tapered-amplifier gain-guided design [1] has been shown to be a very effective means for achieving high output powers(>1W cw) in a single-lobed diffraction-limited beam [2,3]. Although single longitudinal mode operation using a master-oscillator-power-amplifier (MOPA) scheme, with a monolithic Bragg reflector for the master-oscillator has been demonstrated [4], these structures have very limited tuning ranges (typically < 3 nm), and involve careful adjustment and regulation of the temperature. Broader tuning ranges (~35 nm) of -1 W power levels were demonstrated subsequently by using an external-cavity grating-tuned configuration at wavelengths near 860 nm [5], followed by demonstration of ~0.5 W power levels at other wavelength ranges. This work reports the first demonstration of broadly-tunable narrow-linewidth high-power operation (~1.8W cw, and up to 3 W quasi-cw) in the 960-980 nm wavelength range, to develop a source that is critical for a number of applications including high-power blue generation via quasi-phase matched doubling and spectroscopic study of saturation characteristics of Er-codoped amplifiers and lasers in a variety of host media.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128307942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Modeling of VCSEL-based Optoelectronic Modules 基于vcsel的光电模块热建模

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tue.9

N. Morozova, Y. C. Lee

引用次数: 0

Demonstration of High Sensitivity Laser Ranging System 高灵敏度激光测距系统的演示

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tub.4

P. Millar, K. Christian, C. Field

引用次数: 0