Theoretical and Experimental Study on the Temperature Sensitivity of High-Efficiency 1.3-μm InP-Based Strained MQW Lasers

InP-based strained-layer (SL) multiple-quantum-well (MQW) lasers operating at a wavelength of 1.3 μm have attracted much interest due to their potential applications to fiber-in-the-loop (FITL) or fiber-to-the-home (FTTH) systems [1], [2]. For these applications, it becomes important to improve the temperature sensitivity of device properties over a wide range of operating temperatures. We have recently derived the basic design rule for highly-efficient operation of InP-based SL-MQW lasers at elevated temperatures [3]. The SL-MQW lasers fabricated according to this design rule have exhibited high external differential quantum efficiency over 58% in the temperature range up to 363 K [3]. In this paper, we present a theoretical and experimental study on the temperature sensitivity of the differential quantum efficiency and threshold current of 1.3-μm InP-based SL-MQW lasers.