Semiconductor Lasers Advanced Devices and Applications最新文献

Wavelength Uniformity in λ/4-Shifted DFB Laser Array WDM Transmitters λ/4位移DFB激光阵列WDM发射机的波长均匀性

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1995-09-28 DOI: 10.1049/EL:19951202

M. Young, T. Koch, U. Koren, D. Tennant, B. Miller, M. Chien, K. Feder

引用次数: 24

Strained-Layer InGaAs-GaAs-AIGaAs Buried-Heterostructure Lasers with Nonabsorbing Mirrors by Selective-Area MOCVD 基于选择性面积MOCVD的应变层InGaAs-GaAs-AIGaAs埋置异质结构非吸收镜激光器

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1995-06-22 DOI: 10.1049/EL:19950742

R. Lammert, G. M. Smith, D. Forbes, M. Osowski, J. Coleman

{"title":"Strained-Layer InGaAs-GaAs-AIGaAs Buried-Heterostructure Lasers with Nonabsorbing Mirrors by Selective-Area MOCVD","authors":"R. Lammert, G. M. Smith, D. Forbes, M. Osowski, J. Coleman","doi":"10.1049/EL:19950742","DOIUrl":"https://doi.org/10.1049/EL:19950742","url":null,"abstract":"Optical absorption in the active region near the facets of semiconductor lasers during high-power operation may result in catastrophic optical damage (COD). Several schemes to increase the COD limited optical power have been reported. One scheme entails forming non-injection regions near the facets to reduce the nonradiative recombination at the facets [1], [2]. A disadvantage of this scheme is that the non-injection region acts as a saturable absorber which may effect the L-I curve near threshold. Another scheme to increase the output power at which COD occurs involves forming a region at the laser facets which has a higher band gap energy than the energy of the emitted laser light. One method to produce these nonabsorbing mirrors (NAMs) utilizes bent-waveguides fabricated using nonplanar substrates [3], [4]. Although this method produces NAMs with broad near-fields, the coupling of the optical field between the window region and the light-emitting region is low due to the optical beam diffracting freely in the window region. In addition, accurate cleaving is necessary to achieve the relatively short window regions needed (<15 µm). Another method to produce NAMs uses an etch and regrowth technique, but this method also allows the optical beam to diffract freely in the window region and accurate cleaving is again needed [5].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125264142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Influence of small radiation doses on the parameters of injection lasers 小辐射剂量对注入激光器参数的影响

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1992-01-31 DOI: 10.1070/QE1992V022N01ABEH003324

A. Koifman, I. V. Mart'yanova, A. Khaidarov

引用次数: 3

Diode Pumped Solid State Lasers for High Power Precision Machining 用于高功率精密加工的二极管泵浦固体激光器

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.mc.2

L. Marabella

引用次数: 0

Transient Molecular Spectroscopy with a Frequency-Doubled Diode Laser 双频二极管激光器的瞬态分子光谱学

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.mb.2

R. Fox, M. Hunter, L. Hollberg

引用次数: 0

Market Requirements on Semiconductor Lasers for Telecommunications 电信用半导体激光器的市场需求

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.wa.1

N. Olsson, R. L. Hartman, D. Wilt

引用次数: 0

Record small-signal direct modulation bandwidths up to 40 GHz and low chirp characteristics (α = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes 在短腔应变In0.35Ga0.65As/GaAs MQW激光二极管中记录了高达40 GHz的小信号直接调制带宽和低啁啾特性(α = 1.4)

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.pdp.2

A. Schönfelder, S. Weisser, K. Czotscher, E. Larkins, W. Benz, J. Daleiden-, J. Fleissner, M. Maier, J. Ralston, J. Rosenzweig

引用次数: 0

Strain-compensated 1.55 μm DBR lasers for operation at high speed with low drive current 应变补偿的1.55 μm DBR激光器，用于低驱动电流的高速工作

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.ma.2

U. Öhlander, O. Sahlen, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom

引用次数: 0

High-Power Diode Laser Transmitter for Aerosol LIDAR and Laser Ranging 用于气溶胶激光雷达和激光测距的大功率二极管激光发射机

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tub.3

D. Cornwell, A. Yu, G. Hamagel, D. Hopf, P. Millar

{"title":"High-Power Diode Laser Transmitter for Aerosol LIDAR and Laser Ranging","authors":"D. Cornwell, A. Yu, G. Hamagel, D. Hopf, P. Millar","doi":"10.1364/slada.1995.tub.3","DOIUrl":"https://doi.org/10.1364/slada.1995.tub.3","url":null,"abstract":"The next generation of space-based instruments for NASA will be smaller and more efficient than ever before. In keeping with this requirement, LIDAR and laser ranging systems are being developed which are based on AlGaAs semiconductor laser diodes [1, 2]. These systems use pseudo-random noise (PN) intensity modulation of the laser in conjunction with a correlation receiver to improve the overall system sensitivity and allow the inherently low-power diode laser to compete with much higher power solid state and gas lasers. While the size and efficiency of diode lasers make them attractive for such applications, the high-power, quasi-CW intensity modulation of these devices can introduce deleterious effects, such as spectral linewidth broadening. In addition, the highly-divergent beams from diode lasers require fast (F/1) optical systems, which in turn place micron-level tolerances on their opto-mechanical alignment and packaging. We present here the design and performance of a high-power diode laser transmitter which addresses the problem of spectral broadening under large-signal intensity modulation and also the problem of micron-level tolerance opto-mechanical packaging. The laser transmitter is a candidate for an aerosol LIDAR system currently operating at the South Pole, and may also enable future NASA laser ranging and communication systems.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131654938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Power Highly Efficient Vertical-Cavity Surface-Emitting Laser Diodes with a Au-Plated Heat Spreading Layer 高功率高效垂直腔表面发射激光二极管与镀金热扩散层

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI: 10.1364/slada.1995.tud.5

T. Wipiejewski, M. Peters, B. Thibeault, D. Young, L. Coldren

{"title":"High Power Highly Efficient Vertical-Cavity Surface-Emitting Laser Diodes with a Au-Plated Heat Spreading Layer","authors":"T. Wipiejewski, M. Peters, B. Thibeault, D. Young, L. Coldren","doi":"10.1364/slada.1995.tud.5","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.5","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs) are gaining increasing attention due to their interesting properties. The ultimate device performance of VCSELs has exceeded in-plane laser data already regarding minimum threshold currents [1] and highest wall plug efficiency except for high output power pump lasers [2]. Whereas VCSELs are poised to prove their usefulness in short distance data link applications, high efficiency lasers are also attractive for high power applications like laser diode pumped solid state lasers. In general, the maximum output power of VCSELs is thermally limited. Improved heat sinking is therefore necessary to increase the maximum output power. A record high output power of 113 mW has been previously demonstrated with an up-side down mounting of a single VCSEL on a diamond heat sink [3]. Here we show how the thermal heat sinking in a 2D laser array can be improved by using a Au-plated heat spreading layer. The improved heat sinking results in an increase in maximum output power from 20 mW to 42 mW for a 64 µm diameter device. To our knowledge this is the highest output power for an unmounted VCSEL reported to date.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133745262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0