{"title":"小辐射剂量对注入激光器参数的影响","authors":"A. Koifman, I. V. Mart'yanova, A. Khaidarov","doi":"10.1070/QE1992V022N01ABEH003324","DOIUrl":null,"url":null,"abstract":"The effects of small doses (~ 103 - 104 rad) have not been studied sufficiently thoroughly, although these effects are of interest both from the point of view of the possibility of identification of the micromechanisms of radiation-defect formation and deliberate changes in the parameters of the structures, i.e., from the point of view of radiation technology.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Influence of small radiation doses on the parameters of injection lasers\",\"authors\":\"A. Koifman, I. V. Mart'yanova, A. Khaidarov\",\"doi\":\"10.1070/QE1992V022N01ABEH003324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of small doses (~ 103 - 104 rad) have not been studied sufficiently thoroughly, although these effects are of interest both from the point of view of the possibility of identification of the micromechanisms of radiation-defect formation and deliberate changes in the parameters of the structures, i.e., from the point of view of radiation technology.\",\"PeriodicalId\":365685,\"journal\":{\"name\":\"Semiconductor Lasers Advanced Devices and Applications\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-01-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Lasers Advanced Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1070/QE1992V022N01ABEH003324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1070/QE1992V022N01ABEH003324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of small radiation doses on the parameters of injection lasers
The effects of small doses (~ 103 - 104 rad) have not been studied sufficiently thoroughly, although these effects are of interest both from the point of view of the possibility of identification of the micromechanisms of radiation-defect formation and deliberate changes in the parameters of the structures, i.e., from the point of view of radiation technology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
