U. Öhlander, O. Sahlen, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom
{"title":"应变补偿的1.55 μm DBR激光器,用于低驱动电流的高速工作","authors":"U. Öhlander, O. Sahlen, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom","doi":"10.1364/slada.1995.ma.2","DOIUrl":null,"url":null,"abstract":"Strained-layer quantum well (QW) technology allows band-engineered active material to improve threshold current and output power [1], speed [2-4], chirp [2] and temperature performance [5]. A distributed Bragg reflector (DBR) section can be used to obtain longitudinal single-mode operation [6] and improve temperature performance [7]. High-reflectivity (HR) coatings can be employed for better temperature performance [7] and threshold current [1]. We report a combination of DBR rear section, short-cavity QW active section and HR-coated front facet, which improves the properties for direct modulation.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strain-compensated 1.55 μm DBR lasers for operation at high speed with low drive current\",\"authors\":\"U. Öhlander, O. Sahlen, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom\",\"doi\":\"10.1364/slada.1995.ma.2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Strained-layer quantum well (QW) technology allows band-engineered active material to improve threshold current and output power [1], speed [2-4], chirp [2] and temperature performance [5]. A distributed Bragg reflector (DBR) section can be used to obtain longitudinal single-mode operation [6] and improve temperature performance [7]. High-reflectivity (HR) coatings can be employed for better temperature performance [7] and threshold current [1]. We report a combination of DBR rear section, short-cavity QW active section and HR-coated front facet, which improves the properties for direct modulation.\",\"PeriodicalId\":365685,\"journal\":{\"name\":\"Semiconductor Lasers Advanced Devices and Applications\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Lasers Advanced Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/slada.1995.ma.2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/slada.1995.ma.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strain-compensated 1.55 μm DBR lasers for operation at high speed with low drive current
Strained-layer quantum well (QW) technology allows band-engineered active material to improve threshold current and output power [1], speed [2-4], chirp [2] and temperature performance [5]. A distributed Bragg reflector (DBR) section can be used to obtain longitudinal single-mode operation [6] and improve temperature performance [7]. High-reflectivity (HR) coatings can be employed for better temperature performance [7] and threshold current [1]. We report a combination of DBR rear section, short-cavity QW active section and HR-coated front facet, which improves the properties for direct modulation.