在短腔应变In0.35Ga0.65As/GaAs MQW激光二极管中记录了高达40 GHz的小信号直接调制带宽和低啁啾特性(α = 1.4)

Semiconductor Lasers Advanced Devices and Applications Pub Date : 1900-01-01 DOI:10.1364/slada.1995.pdp.2

A. Schönfelder, S. Weisser, K. Czotscher, E. Larkins, W. Benz, J. Daleiden-, J. Fleissner, M. Maier, J. Ralston, J. Rosenzweig

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摘要

我们首次证明了短腔In0.35Ga0.65As/GaAs多量子阱激光二极管的直接调制带宽超过40 GHz。提取出低线宽增强因子(α = 1.4)，表明高速直接调制下激光啁啾减小。

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Record small-signal direct modulation bandwidths up to 40 GHz and low chirp characteristics (α = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes

We demonstrate, for the first time, direct modulation bandwidths exceeding 40 GHz in short-cavity In0.35Ga0.65As/GaAs multiple-quantum-well laser diodes. Low linewidth enhancement factors (α = 1.4) have been extracted, indicating reduced laser chirp under high-speed direct modulation.

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Semiconductor Lasers Advanced Devices and Applications

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