高功率(> 1w)半导体激光器

R. Lang, R. Parke, D. Mehuys, S. O’Brien, J. Major, J. Osinski, G. Harnagel, F. Shum, D. Welch
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引用次数: 0

摘要

基于喇叭形放大器的相干半导体源-单片和分立mopa以及喇叭形不稳定谐振器已经证明了半导体源在630 nm至2 μm波长范围内的最高连续波衍射限制输出功率。本次演讲将介绍喇叭放大器器件的持续发展,包括可见光输出功率接近1 W连续衍射限制,单片器件的衍射限制功率高达10 W,高速调制等。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Power (>1 W) Semiconductor Lasers
Coherent semiconductor sources based on flared amplifiers — monolithic and discrete MOPAs and flared unstable resonators have demonstrated the highest cw diffraction-limited output powers from semiconductor sources at wavelengths from 630 nm to beyond 2 μm. This talk will describe continuing advances in flared amplifier devices, including visible output powers approaching 1 W cw diffraction limited, powers up to 10 W diffraction-limited from monolithic devices, high-speed modulation, and more.
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