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International Conference on Solid State Crystals最新文献

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Effect of silicon microstructure on stress-stimulated creation of thermal donors 硅微观结构对应力刺激生成热供体的影响
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435805
A. Misiuk
{"title":"Effect of silicon microstructure on stress-stimulated creation of thermal donors","authors":"A. Misiuk","doi":"10.1117/12.435805","DOIUrl":"https://doi.org/10.1117/12.435805","url":null,"abstract":"Effect of intentionally created oxygen-related structural defects on generation of thermal donors, TDs in Cz-Si treated at 720K under enhanced hydrostatic pressure of gas ambient, HP, up to 1.5 GPa was investigated. The as-grown Cz-Si samples with initial interstitial oxygen content up to 1.2 X 1018 cm-3 as well as that pre-annealed at 720-1020 K - 105 Pa for up to 170 h, indicate strongly HP - dependent increase of electron concentration in the conduction band after the HT-HP treatment at 720 K for 2-20 h. This confirms the stress-stimulated creation of TDs. HP-induced creation of TDs was much weaker after pre- annealing at 920-1020 K while not detected for the samples containing extended defects. Qualitative explanation of observed phenomena was proposed.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116367484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Theory of behavior of ionized hydrogen in GaSb crystal structure 电离氢在GaSb晶体结构中的行为理论
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435817
V. Šestákova, B. Štěpánek, J. Šesták
{"title":"Theory of behavior of ionized hydrogen in GaSb crystal structure","authors":"V. Šestákova, B. Štěpánek, J. Šesták","doi":"10.1117/12.435817","DOIUrl":"https://doi.org/10.1117/12.435817","url":null,"abstract":"Using the thermodynamical studies it seems proved that ionized hydrogen acts as amphoteric dopant of GaSb. It is splitting to H+ and H- and between these two kinds certain equilibrium is created depending on the concentration of acceptor's and donor's impurities in the GaSb material. There is an inclination of such a crystal to maintain the GaSb structure to be iso electric. This behavior has been studied on undoped and slightly Te-doped GaSb single crystal grown by use of the Czochralski method without encapsulant under a flow of ionized hydrogen. For comparison the studies were repeated under a flow of molecular hydrogen.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"4412 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130502106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of Li2B4O7 glasses doped with rare-earth and transition-metal ions 稀土和过渡金属离子掺杂Li2B4O7玻璃的光学性质
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435866
S. Kaczmarek, C. Koepke, M. Grinberg, A. Majchrowski, K. Wisniewski, M. Czuba
{"title":"Optical properties of Li2B4O7 glasses doped with rare-earth and transition-metal ions","authors":"S. Kaczmarek, C. Koepke, M. Grinberg, A. Majchrowski, K. Wisniewski, M. Czuba","doi":"10.1117/12.435866","DOIUrl":"https://doi.org/10.1117/12.435866","url":null,"abstract":"Absorption and emission spectra of Cr, Eu and Dy ions in Li2B4O7 glasses melted in oxygen and hydrogen were measured for valency states and excited states analysis. It was stated that the presence of Cr6+ ion is limited by composition of the starting mixture and atmosphere of the melting and that this ions arises as Cr6+O4 complex.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"518 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123109674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures 应力对注入氢硅和SOI结构缺陷转变的影响
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435812
I. Antonova, V. Popov, J. Bąk-Misiuk, J. Domagała, A. Misiuk, V. Obodnikov, A. Gutakovskii, A. Romano-Rodríguez
{"title":"Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures","authors":"I. Antonova, V. Popov, J. Bąk-Misiuk, J. Domagała, A. Misiuk, V. Obodnikov, A. Gutakovskii, A. Romano-Rodríguez","doi":"10.1117/12.435812","DOIUrl":"https://doi.org/10.1117/12.435812","url":null,"abstract":"Transformation of defects in hydrogen implanted silicon and silicon-on-insulator structures caused by external pressure of argon ambient at the stage of defect removal in implanted material and high temperature annealing SOI structures is reported. The results are compared to these for crystals annealed at argon atmosphere of ambient pressure. Formation of the new phase crystallites was found in SOI structures annealed at high temperature in conditions of high pressure. Small insulations were also observed in hydrogen implanted silicon, which can be patterns of the new phase. Two reasons can cause phase transformation in the top silicon layer of as-bonded SOI structures: high hydrogen concentration and high local strain.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134628495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Annealing of GaSb single crystals in ionized hydrogen atmosphere 电离氢气氛中GaSb单晶的退火
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435865
B. Štěpánek, V. Šestákova, J. Šesták
{"title":"Annealing of GaSb single crystals in ionized hydrogen atmosphere","authors":"B. Štěpánek, V. Šestákova, J. Šesták","doi":"10.1117/12.435865","DOIUrl":"https://doi.org/10.1117/12.435865","url":null,"abstract":"GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134050597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Stokes and anti-Stokes luminescence in LiTaO3:Ho LiTaO3:Ho中的Stokes和反Stokes发光
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435864
W. Ryba-Romanowski, S. Gołąb, I. Sókolska, G. Dominiak-Dzik, P. Solarz, T. Lukasiewicz, M. Świrkowicz
{"title":"Stokes and anti-Stokes luminescence in LiTaO3:Ho","authors":"W. Ryba-Romanowski, S. Gołąb, I. Sókolska, G. Dominiak-Dzik, P. Solarz, T. Lukasiewicz, M. Świrkowicz","doi":"10.1117/12.435864","DOIUrl":"https://doi.org/10.1117/12.435864","url":null,"abstract":"This paper deals with the excitation and decay of excited state of holmium in LiTaO3 single crystals. Particular attention is paid to processes governing a population build up on the 5S2 and 5I7 metastable states whose quantum efficiencies are sufficiently high to be considered as initial levels for a laser transition. We observed for the first time, to our knowledge, an efficient conversion of the 647.1 nm light of a krypton ion laser into green luminescence in the material studied. Based upon analysis of excited state relaxation dynamics it is concluded that the mechanism involved is the excited state absorption from the long lived 5I7 level. Efficient single wavelength excitation is due to coincidence of transition energies of the ground state absorption and excited state absorption.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":" 16","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132094301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PIXE and magnetic investigations of LaxRE1-x F3 (RE = Ce,Nd) single crystals LaxRE1-x F3 (RE = Ce,Nd)单晶的PIXE和磁性研究
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435835
M. L. Paradowski, M. Kulik, W. Korczak, Z. Korczak
{"title":"PIXE and magnetic investigations of LaxRE1-x F3 (RE = Ce,Nd) single crystals","authors":"M. L. Paradowski, M. Kulik, W. Korczak, Z. Korczak","doi":"10.1117/12.435835","DOIUrl":"https://doi.org/10.1117/12.435835","url":null,"abstract":"The mixed LaxRE1-xF3 single crystals doped with Gd3+ were grown by a modified Bridgmann- Stockbarger method. The PIXE method was used to the determination of a composition x of this material. The value of x for these samples does not differ more than 2.5 percent and 7.5 percent in LaxCe1-xF3 and LaxNd1-xF3 respectively, from the assumed one. In addition, concentrations of the doped rare earth atoms were controlled by XRF method. The abundance of other than Gd3+ rare earth impurities was estimated to be below 0.058 at percent. The magnetic susceptibility of the single crystals was measured in the temperature range 4-300 K, in a magnetic field B equals 0.2 T applied in the crystallographic plane perpendicular to the c-axis using the Faraday method. The magnetic susceptibility measurements confirm the lack of Ce3+ and Nd3+ clusters in the diluted crystals. The effective spins of hosts Ce3+ and Nd3+ are equal to ½ in the temperature range 4-300 K.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129737772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Crystal lattice dynamics of various silicon-carbide polytypes 各种碳化硅多型的晶格动力学
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435822
S. Nowak
{"title":"Crystal lattice dynamics of various silicon-carbide polytypes","authors":"S. Nowak","doi":"10.1117/12.435822","DOIUrl":"https://doi.org/10.1117/12.435822","url":null,"abstract":"A valence force field model with an added ionic interaction is applied to an explanation of phonon dispersion curves in 6H-SiC. The phonon dispersion curves in 3C-, 2H-, and 4H-SiC are calculated within the same model. Our results are compared with the published result of ab initio calculations. One can suppose that the present model may be applied for other polytypes of SiC. A phonon contribution to Helmholtz energy is determined for the simplest four polytypes. The results indicate a stability of hexagonal polytypes in relation to the cubic one at high temperatures.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116308636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Correlation of Cu and VZn concentration within the diffusion region of ZnSe monocrystals ZnSe单晶扩散区内Cu和VZn浓度的相关性
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435800
T. Lukaszewicz
{"title":"Correlation of Cu and VZn concentration within the diffusion region of ZnSe monocrystals","authors":"T. Lukaszewicz","doi":"10.1117/12.435800","DOIUrl":"https://doi.org/10.1117/12.435800","url":null,"abstract":"In this paper both the diffusion of Cu ions in ZnSe monocrystals of M1-yX type as well as its influence on the concentration of cation vacancy have been investigated. For the purpose of the investigation the phenomenon of luminescence was used since the diffused impurity by acting on the native defects of the crystal was found to have caused the formation of complexes e.g. centers of luminescence. Thus we can have a few diffusion mechanisms.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132366388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth and characterization of single crystals of ternary chalcogenides for laser applications 用于激光的三元硫属化合物单晶的生长和表征
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435857
L. Isaenko, A. Yelisseyev, J. Zondy, G. Knippels, I. Thenot, S. Lobanov
{"title":"Growth and characterization of single crystals of ternary chalcogenides for laser applications","authors":"L. Isaenko, A. Yelisseyev, J. Zondy, G. Knippels, I. Thenot, S. Lobanov","doi":"10.1117/12.435857","DOIUrl":"https://doi.org/10.1117/12.435857","url":null,"abstract":"Bulk single crystals up to 20 mm in diameter and 40 mm long for LiInS2 and up to 10 mm, 20mm, respectively, for LiInSe2 have been grown. Their color changed from colorless to rose for the first one and from yellow to dark red for the other. All crystals have wurtzite-type lattice, lattice parameters were determined. A band gap was found to be 3.72 and 3.57 eV for LiInS2 and 3.02, 2.86 eV for LiInSe2 at 80 and 300K respectively. Color variations are due to point defects, first of all to interstitial sulfur, resulting in additional wide absorption bands in the shortwave part of transparency range. For LiInS2 the SHG phase matching conditions were found to be similar for samples of different color and some difference from Boyd's predictions of 1973 was shown.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123864539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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