Annealing of GaSb single crystals in ionized hydrogen atmosphere

Abstract

GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .