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International Conference on Solid State Crystals最新文献

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Modeling of the carrier mobility at the silicon oxynitride-silicon interface 氮氧硅-硅界面载流子迁移率的建模
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435852
K. Plucinski
{"title":"Modeling of the carrier mobility at the silicon oxynitride-silicon interface","authors":"K. Plucinski","doi":"10.1117/12.435852","DOIUrl":"https://doi.org/10.1117/12.435852","url":null,"abstract":"The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride. However, degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133229218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical model of carrier flow process on boundary of electrode-dye layer 电极-染料层边界载流子流动过程的理论模型
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435823
D. Wróbel, T. Hoffmann
{"title":"Theoretical model of carrier flow process on boundary of electrode-dye layer","authors":"D. Wróbel, T. Hoffmann","doi":"10.1117/12.435823","DOIUrl":"https://doi.org/10.1117/12.435823","url":null,"abstract":"The aim of this paper is better understanding of the process of carrier flow generation on the boundary of electrode-dye layer in a photoelectrochemical cell for application in solar energy conversion. Such a boundary of two semispaces is a theoretical 2D model of a photoelectrochemical cell which consists of electrodes and a layer of organic dye molecules in which electron transport process can take place. The semispaces are described in their own micorcanonical distributions. We will consider the process of carrier flow generation on the boundary of electrode-dye layer by means of formalism of thermodynamical quantum statistics. We have obtained the statistical average value of the function of electromagnetic field at the given temperature and in approximation of the low temperature.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115385280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phase transitions in double tungstate in extremely low-dimensional and low-symmetry compounds with cooperative Jahn-Teller effect 双钨酸盐在极低维低对称化合物中的相变与协同Jahn-Teller效应
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435825
M. Borowiec
{"title":"Phase transitions in double tungstate in extremely low-dimensional and low-symmetry compounds with cooperative Jahn-Teller effect","authors":"M. Borowiec","doi":"10.1117/12.435825","DOIUrl":"https://doi.org/10.1117/12.435825","url":null,"abstract":"The rare earth double tungstates are of special interest because of manifestation of cooperative Jahn-Teller effect (CJTE) for low-dimensional and low-symmetry crystallographic structure. The structural phase transition (SPT) as a result of the CJTE is unique one among large number of various SPT in solids. In the alkali-dysprosium double tungstates ADy(WO4)2 in spite of monoclinic symmetry the SPT of CJTE types are realized because the presence of Dy3+ ions with closely spaced energy levels. In alkali-dysprosium double tungstates the magnetically ordered structures possessing a number of features connected with low- dimensional interactions of Dy3+ ions were observed. Studies of specific heat in magnetic field and of magnetic susceptibility led to conclusion that the magnetic phase transitions (MPT) from paramagnetic to antiferromagnetic state take place at subkelvin temperature region. Both MPT and SPT are very sensitive to magnetic field. In case of SPT this confirms its CJTE nature and allows to determine the type of the elastic ordering. The external magnetic field induced the transitions from antiferro- to ferromagnetic states. The alkali-dysprosium double tungstates belong to the more general class of magneto-elastics with interrelation between magnetic and elastic ordering.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131506373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Correlation of domain structure of TGS single crystals doped with serine and its dielectric properties: new constructed computer measuring system for quantity analysis of domain images 丝氨酸掺杂TGS单晶的畴结构与介电性能的相关性:一种用于域图像定量分析的新型计算机测量系统
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435850
W. Proszak, M. Trybus
{"title":"Correlation of domain structure of TGS single crystals doped with serine and its dielectric properties: new constructed computer measuring system for quantity analysis of domain images","authors":"W. Proszak, M. Trybus","doi":"10.1117/12.435850","DOIUrl":"https://doi.org/10.1117/12.435850","url":null,"abstract":"This paper presents work over correlation between parameters of domain structure and pyroelectric current in IR sensors based on TGS. In the frames of realized works new single- crystal of TGS doped with amino acid-serine was grown. Computer measuring system making possible registration of domain structure images of non-linear dielectrics was designed and executed. We worked out measuring and analysis algorithms of domain images. Software making possible calculations and analysis of parameters of observed structures was created and static measurements of domain structure within different growth pyramids were performed. Correlation between parameters of domain structure, quantity of admixture and temperature characteristics of pyroelectric coefficient was found.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"499 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127589167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of divergence of light wave and alignment of crystal on the response of electro-optic modulators 光波发散和晶体对准对电光调制器响应的影响
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435868
M. Izdebski, W. Kucharczyk
{"title":"Effect of divergence of light wave and alignment of crystal on the response of electro-optic modulators","authors":"M. Izdebski, W. Kucharczyk","doi":"10.1117/12.435868","DOIUrl":"https://doi.org/10.1117/12.435868","url":null,"abstract":"In this work we report on numerical investigations of the effect of the light beam divergence or imperfect crystal alignment on the response of electrooptic modulators. Resulting non linearities are discussed both in terms of nonlinear distortion of modulators and as related to errors in measurements of quadratic electrooptic coefficients. Our calculations based on the Jones calculus have been performed for uniaxial crystals including KDP, and its isomorphs, and LiNbO3. The results obtained confirm that either the response of the modulators or results of electrooptic measurements can be significantly affected by the light divergence or imperfections in the crystals alignment.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114920806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nonlinear I-V characteristics and threshold switching in As-Te-In glasses As-Te-In玻璃的非线性I-V特性和阈值开关
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435836
J. Devaraju, B. Sharmila, K. V. Acharya, S. Asokan, E. Gopal
{"title":"Nonlinear I-V characteristics and threshold switching in As-Te-In glasses","authors":"J. Devaraju, B. Sharmila, K. V. Acharya, S. Asokan, E. Gopal","doi":"10.1117/12.435836","DOIUrl":"https://doi.org/10.1117/12.435836","url":null,"abstract":"Non-linear I-V behavior and electrical switching exhibited by chalcogenide glassy semiconductors, find applications in variety of areas including information storage and power control. In this work, semiconducting chalcogenide As40Te60-xInx glasses have been prepared by melt quenching technique. The current-voltage and electrical switching behavior of these glasses have been studied using a custom-built PC based system. The results obtained clearly indicate that all the glasses studied exhibit current controlled negative resistance behavior, which leads to the low resistance state. The switching to the low resistance estate is found to be reversible and the samples revert back to the high resistance state on reducing the current. Threshold switching over such a wide range of compositions has been observed only in very few systems so far. The most interesting outcome of the present studies is the variation of the switching voltage with composition. It is observed that there is an increase in the switching voltage Vt with the increase in indium concentration in the composition range 7.5 <EQ x <EQ 12.5. Further, the composition dependence of switching field is found to exhibit a distinct change in slope at x equals 12.5 and Vt continues to increase with x until x equals 13.5. Around x equals 13.5, the trend is reversed and Vt starts decreasing with x. A minimum in Vt is seen around the composition x equals 14.3, which corresponds to the chemical threshold of the As-Te-In system. Beyond x equals 14.3, switching voltage is found to increase with composition again. The present result are consistent with earlier observations, which indicate the composition dependence of switching voltages of chalcogenide glasses are influenced by chemical ordering and rigidity percolation.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133794913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Czochralski growth and characterization of SrLaGa3O7:Ho3+single crystals SrLaGa3O7:Ho3+单晶的Czochralski生长及表征
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435862
Izabella Pracka, M. Malinowski, M. Świrkowicz, J. Kisielewski, A. Bajor, A. Kłos, B. Kaczmarek, B. Surma
{"title":"Czochralski growth and characterization of SrLaGa3O7:Ho3+single crystals","authors":"Izabella Pracka, M. Malinowski, M. Świrkowicz, J. Kisielewski, A. Bajor, A. Kłos, B. Kaczmarek, B. Surma","doi":"10.1117/12.435862","DOIUrl":"https://doi.org/10.1117/12.435862","url":null,"abstract":"Rare-earth doped SrLaGa3O7 single crystal are promising laser materials. Also crystal doped with Ho3+ ions could be used as efficient laser in visible and near IR regions. Laser materials, generating in visible and IR regions, can be used for optical data recording in micro photolithography and in medicine. SrLaGa3O7 single crystal doped with 0.3, 1.5 and 2 at percent of Ho3+, respectively were grown by the Czochralski method with use of iridium crucible and after heater. According to EPMA measurements distribution coefficient of Ho3+ in SrLaGa3O7 was estimated to be k approximately equals 0.22. Optical absorption spectra in visible and IR regions were measured at 300K and 12K respectively. Optical quality of single crystals was checked by the use of computerized imaging spectropolarimeter and polariscopic measurements. Temperature dependence of capacitance and conductivity for different dopant concentrations were also measured.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116926807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Lower critical fields in BKBO single crystals BKBO单晶的低临界场
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435838
S. Barilo, V. Gatalskaya, S. V. Shiryaev, A. Shestac
{"title":"Lower critical fields in BKBO single crystals","authors":"S. Barilo, V. Gatalskaya, S. V. Shiryaev, A. Shestac","doi":"10.1117/12.435838","DOIUrl":"https://doi.org/10.1117/12.435838","url":null,"abstract":"We performed dc-magnetization measurements in low magnetic fields on single crystals of Ba1-xKxBiOy with the different potassium content. The single crystal reveal the superconducting transition at 29-31K. It is shown that the lower critical fields HCl in crystals amount to 104 Oe, 126 and 112 Oe. The values of the penetration depth (lambda) are equal to 2530 A, 2430 A and 2670 A for x equals 0.34, 0.37 and 0.4 respectively.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132637660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon 高压高温处理对直克拉氏硅中子辐照缺陷的影响
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435806
C. A. Londos, L. G. Fytros, A. Misiuk, J. Bąk-Misiuk, M. Prujszczyk, M. Potsidou
{"title":"Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon","authors":"C. A. Londos, L. G. Fytros, A. Misiuk, J. Bąk-Misiuk, M. Prujszczyk, M. Potsidou","doi":"10.1117/12.435806","DOIUrl":"https://doi.org/10.1117/12.435806","url":null,"abstract":"Czochralski-grown silicon crystals of the same initial oxygen content were subjected to various high temperature- high pressure (HTHP) treatments for different time durations. Subsequently, the crystals were irradiated by fast neutrons at approximately 50 degrees C. One of the main defects form is VO pair usually identified in the IR spectra by the 830 cm-1 localized vibrational model (LVM) band. Upon annealing, this defect is converted to the VO2 defect responsible for a LVM band at 887 cm-1. The purpose of this work is to study the effect of various combinations of HTHP treatment prior to irradiation on the annealing behavior of the VO defect and particularly on its conversion to the VO2 defect. We have concluded that the conversion of VO to VO2 depend on the forms of oxygen impurity and on other defects created in the sample after the HTHP treatment, as for example dislocations and stacking faults.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128359560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Elastic and elasto-optic properties of Zn1-xBexSe mixed crystals by Brillouin scattering method 用布里渊散射法研究Zn1-xBexSe混合晶体的弹性和弹光学性质
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435849
P. Ziobrowski, M. Szybowicz, M. Drozdowski, F. Firszt, S. Legowski, J. Szatkowski
{"title":"Elastic and elasto-optic properties of Zn1-xBexSe mixed crystals by Brillouin scattering method","authors":"P. Ziobrowski, M. Szybowicz, M. Drozdowski, F. Firszt, S. Legowski, J. Szatkowski","doi":"10.1117/12.435849","DOIUrl":"https://doi.org/10.1117/12.435849","url":null,"abstract":"In this paper we report experimental results concerning the elastic and elastooptic properties of Zn1-xBexSe mixed crystals grown by high pressure Bridgman technique. Using Brillouin scattering method some of the elastic and elastooptic constants of Zn1-xBexSe crystals with different Be content have been determined at room temperature. It has been revealed that the elastic and elastooptic properties strongly depend on the content of Be.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133383504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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