{"title":"氮氧硅-硅界面载流子迁移率的建模","authors":"K. Plucinski","doi":"10.1117/12.435852","DOIUrl":null,"url":null,"abstract":"The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride. However, degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of the carrier mobility at the silicon oxynitride-silicon interface\",\"authors\":\"K. Plucinski\",\"doi\":\"10.1117/12.435852\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride. However, degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.435852\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435852","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of the carrier mobility at the silicon oxynitride-silicon interface
The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride. However, degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.