氮氧硅-硅界面载流子迁移率的建模

K. Plucinski
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引用次数: 0

摘要

进一步开发表面沟道mosfet的主要问题是理解和消除绝缘体-半导体界面载流子迁移率的恶化。造成这种劣化的主要因素是空穴和电子的捕获-脱陷。最近提出的最小化Si-SiO2界面空穴和电子捕获-脱陷的方法之一是用氮化硅代替SiO2。然而,以氮氧化物作为栅极介质的mosfet,由于通道中热电子的捕获而退化,仍然被发现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling of the carrier mobility at the silicon oxynitride-silicon interface
The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride. However, degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.
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