{"title":"电离氢气氛中GaSb单晶的退火","authors":"B. Štěpánek, V. Šestákova, J. Šesták","doi":"10.1117/12.435865","DOIUrl":null,"url":null,"abstract":"GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Annealing of GaSb single crystals in ionized hydrogen atmosphere\",\"authors\":\"B. Štěpánek, V. Šestákova, J. Šesták\",\"doi\":\"10.1117/12.435865\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.435865\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Annealing of GaSb single crystals in ionized hydrogen atmosphere
GaSb undoped wafer were annealed in flowing ionized hydrogen atmosphere at temperature range between 100-350 degrees C for 1-50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 degrees C for 24 hours reached the resistivity of about 102-103 (Omega) cm and the free carrier concentration was lower than 1 by 1015 cm-3. However, the thickness of the passivated layer was only 0.4-0.6 micrometers .
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