Proceedings of the International Conference on Multichip Modules最新文献_第2页

Mcm-L Technologies: Myths and Experiences in Multiple Product Scenarios Mcm-L技术:多产品场景中的神话和经验

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753584

D. Carey, H. Hashemi, P. Hunter

引用次数: 1

Design of the Interconnected Mesh Power System (IMPS) MCM Topology 互联网格电力系统(IMPS) MCM拓扑的设计

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753603

L. Schaper, S. Ang, Y. Low

引用次数: 5

Algorithmic Diagnosis of Multichip Module Defects Using the IEEE 1149.1 Standard 基于IEEE 1149.1标准的多芯片模块缺陷诊断算法

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753551

K. Posse

引用次数: 1

The Essential Role of Custom Design Kits for Cost-Effective Access to the Mcm Foundry 定制设计套件的基本作用为经济有效地进入Mcm铸造厂

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753602

R. McBride, D.P. Zarnow, R.L. Brown

引用次数: 1

High Performance Elastic Connection for Reliable Device Testing 用于可靠设备测试的高性能弹性连接

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753557

K. Hiwada, T. Tamura

引用次数: 0

3-D Stacking Using the GE High Density Multichip Module Technology 使用GE高密度多芯片模块技术实现三维堆叠

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753564

R. Saia, R. Wojnarowski, R. Fillion, G. Forman, B. Gorowitz

{"title":"3-D Stacking Using the GE High Density Multichip Module Technology","authors":"R. Saia, R. Wojnarowski, R. Fillion, G. Forman, B. Gorowitz","doi":"10.1109/ICMCM.1994.753564","DOIUrl":"https://doi.org/10.1109/ICMCM.1994.753564","url":null,"abstract":"To solve the interconnect and packaging problems associated with large distributed processing systems and of mass memory systems, the GE Corporate Research and Development Center has developed a 3-D stacked multichip module (MCM) technology. This technology uses, as building blocks, modules produced by the GE High Density Interconnect (HDI) embedded chip process. The fundamental features of this 2-D HDI polymer film overlay process, which are used to interconnect a number of chips within a common substrate, are extended to the interconnection of a number of multichip substrates. The 2-D HDI substrates with their essentially planar surface, and chips recessed beneath the interconnect structure, are ideally suited for direct 3-D stacking of one substrate upon another. The thermal path of the stack is directly through the substrate to the base of the stack. The substrate I/O connections are brought to the substrate edges for vertical connection within the stack. The multilayer lamination and thin film interconnect processes used to interconnect the chips, i.e. polyimide film dielectric, laser formed vias, and electroplated copper metallization, are then applied to one or more of the four edges of the stack. This paper will describe the basic 2-D HDI process and how it was extended to the 3-D interconnection of multichip substrates.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131010907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Design and Test of a Complex Mcm Product 复杂Mcm产品的设计与测试

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753550

W. Blood, A. Flint

引用次数: 2

Thin Film Transfer Process for Low Cost Mcm-D Fabrication 低成本Mcm-D制造的薄膜转移工艺

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753537

C. Narayan, S. Purushothaman, F. Doany, A. Deutsch

引用次数: 19

Redefining the Economics of Mcm Applications 重新定义Mcm应用程序的经济性

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753567

D. Cokely, C. Strittmatter

{"title":"Redefining the Economics of Mcm Applications","authors":"D. Cokely, C. Strittmatter","doi":"10.1109/ICMCM.1994.753567","DOIUrl":"https://doi.org/10.1109/ICMCM.1994.753567","url":null,"abstract":"The economics governing the decision to design and integrate MCMs into products is often limited to comparison of the associated material costs. In many cases, MCM material costs exceed that of the discretes and integrated circuits which it could potentially replace. Such narrow focus has contributed to a stifling of the MCM technology explosion. Equitable comparisons must be made through a full stream system analysis with consideration given to feature enhancement, overall yield, labor, load and warranty impacts on the end product. MicroInterconnect Technology is an extension of traditional MCMs in that integration of functions can result in space and performance improvements. However, when ICs are flipped to a silicon substrate containing active and passive devices, component count decreases significantly and the critical system performance metrics, are further improved. At AT&T-Shreveport, small business telephone systems are manufactured to compete with other \"commodity\" vendors in the world market. Success in this high volume environment requires aggressive cost management and achievement of reliability levels consistent with consumer expectations. The Partner/sup R/ Product Management Team will be the first to integrate flip-chip, silicon-on-silicon, MicroInterconnect MCM technology by 2Q94. Successive cost reductions will be enabled with the introduction of MicroInterconnect Technology which positively affect system cost and performance.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122229293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Integrated Flex: Rigid-Flex Capability in a High Performance Mcm 集成Flex:高性能Mcm中的刚性-柔性能力

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753586

D. Light, J. S. Kresge, C.R. Davis

{"title":"Integrated Flex: Rigid-Flex Capability in a High Performance Mcm","authors":"D. Light, J. S. Kresge, C.R. Davis","doi":"10.1109/ICMCM.1994.753586","DOIUrl":"https://doi.org/10.1109/ICMCM.1994.753586","url":null,"abstract":"IBM Microelectronics has developed a High Performance Carrier (HPC) technology to provide leading edge packaging solutions to evolving computer system demands. High Performance Carrier provides high wireability, high performance, and high I/O capability at an affordable cost per unit function and performance. High Performance Carrier is an extremely versatile interconnection technology which is suitable for a broad range of applications. HPC utilizes a Teflon (R) based insulator material to provide superior electrical and mechanical characteristics, and a unique composite layer-joining process to enhance wireability, design flexibility, and composite yield. The High Performance Carrier technology can also provide integration of carrier, flex cables and connector into a single structure: cables are essentially the continuation of 'long' cores which extend beyond the laminated carrier region. This eliminates the need for mechanical or soldered interconnections at the cable-carrier interface. This design capability can significantly reduce interconnection distances and eliminate impedance discontinuities between the cable and carrier. I/O capability is drastically increased over conventional technologies: up to 300 I/O per linear inch per cable can be packaged. Cables can extend from any or all 4 edges of the carrier, providing a whole new realm of possibilities for interconnection of system packaging components, such as SCM's, MCM's, printed wiring boards, and switching networks. Three dimensional and folding third level packaging designs are also facilitated. This paper will give an overview of the HPC technology, and will discuss design, performance, reliability, and process aspects of Integrated Flex in detail.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114243473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4