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2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting最新文献

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Electrothermal Effects in Bipolar Differential Pairs 双极差分对中的电热效应
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI: 10.1109/BIPOL.2007.4351853
L. La Spina, V. d’Alessandro, F. Santagata, N. Rinaldi, L. Nanver
{"title":"Electrothermal Effects in Bipolar Differential Pairs","authors":"L. La Spina, V. d’Alessandro, F. Santagata, N. Rinaldi, L. Nanver","doi":"10.1109/BIPOL.2007.4351853","DOIUrl":"https://doi.org/10.1109/BIPOL.2007.4351853","url":null,"abstract":"The electrothermal behavior of bipolar differential pairs fabricated in silicon-on-glass technology is investigated. Experimental results demonstrate that a considerable distortion of the characteristics may occur when the individual transistors are sensitive to electrothermal effects, with consequent performance and reliability reduction. Simulations are employed to support the measurements and to examine methods to reduce the electrothermal feedback.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132025638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Improvement of the Transfer Current Modeling in HICUM/L0 HICUM/L0中传递电流建模的改进
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI: 10.1109/BIPOL.2007.4351840
C. Thiele, J. Berkner, W. Klein
{"title":"Improvement of the Transfer Current Modeling in HICUM/L0","authors":"C. Thiele, J. Berkner, W. Klein","doi":"10.1109/BIPOL.2007.4351840","DOIUrl":"https://doi.org/10.1109/BIPOL.2007.4351840","url":null,"abstract":"HICUM/L0 is a bipolar compact model, which was developed to combine the advantage of the sophisticated HICUM/L2 and the simplicity of the well-known SGP-Model. In this paper improved model equations for the description of the forward transfer current in the HICUM/LO model are presented. The improved model equations avoid a negative slope which can occur in the simulated collector current, but they do not need additional model parameters.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"48 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130275788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop 使用数字实现的自动功率控制环路的0.155-2.5 gbps SiGe BiCMOS突发模式激光驱动器违反IEEE发布原则的通知
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI: 10.1109/BIPOL.2007.4351850
A. Maxim
{"title":"Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop","authors":"A. Maxim","doi":"10.1109/BIPOL.2007.4351850","DOIUrl":"https://doi.org/10.1109/BIPOL.2007.4351850","url":null,"abstract":"A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123123598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
More Than Moore's Law: Nanofabrics and Architectures 超越摩尔定律:纳米结构和体系结构
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI: 10.1109/BIPOL.2007.4351855
Kang L. Wang, A. Khitun, K. Galatsis
{"title":"More Than Moore's Law: Nanofabrics and Architectures","authors":"Kang L. Wang, A. Khitun, K. Galatsis","doi":"10.1109/BIPOL.2007.4351855","DOIUrl":"https://doi.org/10.1109/BIPOL.2007.4351855","url":null,"abstract":"In the nanoelectronics era with ever smaller devices and higher densities, power dissipation and fault tolerance are the two most critical issues to be resolved. The fabrication of reliable and less power dissipating nanosystems requires new approaches to nanodevice integration, which makes Nano Architectonics one of the emerging research directions. This paper presents an example of recent progress of using carbon nanotubes as a nanofabric in working towards this objective. As an alternative route to the traditional electron-based circuitry, we also discuss the feasibility of spin-based nanofabrics consisting of spin-based memory elements united via spin wave buses. These approaches are most notably developed by the Focus Center Research Program (FCRP) -Center on Functional Engineered Nano Architectonics (FENA) and the Nanoelectronics Research Initiative (NRI) -Western Institute of Nanoelectronics (WIN).","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125228572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm / 32.3 dBm Output Power at 56 % / 44 % PAE in Low/High-Band 四频带GSM/ edge兼容sige双极功率放大器，在低/高频带56% / 44% PAE下输出功率为35.9 dBm / 32.3 dBm
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI: 10.1109/BIPOL.2007.4351846
B. Sogl, W. Bakalski, M. Zannoth, M. Asam, B. Kapfelsperger, J. Berkner, B. Eisener, W. Osterreicher, E. Rampf, A. Scholtz, B. Klepser
{"title":"A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm / 32.3 dBm Output Power at 56 % / 44 % PAE in Low/High-Band","authors":"B. Sogl, W. Bakalski, M. Zannoth, M. Asam, B. Kapfelsperger, J. Berkner, B. Eisener, W. Osterreicher, E. Rampf, A. Scholtz, B. Klepser","doi":"10.1109/BIPOL.2007.4351846","DOIUrl":"https://doi.org/10.1109/BIPOL.2007.4351846","url":null,"abstract":"A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915MHz and 1710-1910MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a bias-control circuit for power control, band select and mode dependent quiescent currents. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak PAE is 56 % for low-band and 44 % for high-band.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126235650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
BCTM 2007
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1900-01-01 DOI: 10.1109/bipol.2007.4351819
Yih-Feng Chyan, Marise Bafleur, Marcel Tutt, Larry Nagel, Paul C. Davis, Bruce Hecht, Alvin J. Joseph, David Ngo, Saurabh Desai, F. Thiel, Hugo Veenstra, Dan Friedman, Guofu Niu, John D. Cressler, M. Breil, Sameer Pendharkar, Gary M. Dolny, T. Krutsick, Marco Racanelli, Robert M. Rassel, Wibo D. Van Noort, Koji Yonemura, Dieter Knoll, J. Begueret, Doug Teeter, Paul C. Davis
{"title":"BCTM 2007","authors":"Yih-Feng Chyan, Marise Bafleur, Marcel Tutt, Larry Nagel, Paul C. Davis, Bruce Hecht, Alvin J. Joseph, David Ngo, Saurabh Desai, F. Thiel, Hugo Veenstra, Dan Friedman, Guofu Niu, John D. Cressler, M. Breil, Sameer Pendharkar, Gary M. Dolny, T. Krutsick, Marco Racanelli, Robert M. Rassel, Wibo D. Van Noort, Koji Yonemura, Dieter Knoll, J. Begueret, Doug Teeter, Paul C. Davis","doi":"10.1109/bipol.2007.4351819","DOIUrl":"https://doi.org/10.1109/bipol.2007.4351819","url":null,"abstract":"","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130336301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2007 BCTM Exhibitors 2007 BCTM参展商
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1900-01-01 DOI: 10.1109/bipol.2007.4351820
Bctm Sponsors
{"title":"2007 BCTM Exhibitors","authors":"Bctm Sponsors","doi":"10.1109/bipol.2007.4351820","DOIUrl":"https://doi.org/10.1109/bipol.2007.4351820","url":null,"abstract":"","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"340 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123402590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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