Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop
{"title":"Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop","authors":"A. Maxim","doi":"10.1109/BIPOL.2007.4351850","DOIUrl":null,"url":null,"abstract":"A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2007.4351850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.