Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop

A. Maxim
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Abstract

A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.
使用数字实现的自动功率控制环路的0.155-2.5 gbps SiGe BiCMOS突发模式激光驱动器违反IEEE发布原则的通知
一款适用于G-PON/E-PON应用的多标准激光驱动器采用0.2 μ g SiGe BiCMOS技术,支持高达2.5 Gbps的数据速率。通过构建按比例缩小的复制信号路径,实现了处理576/96 ns最小突发通/关时间的快速开关偏置电流发生器。采用带电阻尾的差动开关和设置与调制相关的驱动电压摆幅和尾电流值的共模回路,确保了低电源电压的运行。采用数字自动功率控制回路,在温度角和发射机寿命范围内保持恒定的平均光功率,同时允许长爆发时间。驱动器规格包括:10至80 mA调制电流范围,1至80 mA偏置电流范围,155 Mbps至2.5 Gbps数据速率,<40 ps上升和下降时间,<17 psnp确定性抖动,30 mA电流来自3至3.6 V电源和2.5倍2.7 mm2芯片面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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