{"title":"使用数字实现的自动功率控制环路的0.155-2.5 gbps SiGe BiCMOS突发模式激光驱动器违反IEEE发布原则的通知","authors":"A. Maxim","doi":"10.1109/BIPOL.2007.4351850","DOIUrl":null,"url":null,"abstract":"A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop\",\"authors\":\"A. Maxim\",\"doi\":\"10.1109/BIPOL.2007.4351850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.\",\"PeriodicalId\":356606,\"journal\":{\"name\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2007.4351850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2007.4351850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Notice of Violation of IEEE Publication Principles0.155-2.5Gbps SiGe BiCMOS Burst-Mode Laser Driver Using a Digital Implementation of the Automatic Power Control Loop
A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5 Gbps was realized in a 0.2 mum SiGe BiCMOS technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96 ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80 mA modulation current range, 1 to 80 mA bias current range, 155 Mbps to 2.5 Gbps data rate, <40 ps rise and fall times, <17 psnp deterministic jitter, 30 mA current from a 3 to 3.6 V supply and 2.5 times 2.7 mm2 die area.