A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm / 32.3 dBm Output Power at 56 % / 44 % PAE in Low/High-Band

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351846

B. Sogl, W. Bakalski, M. Zannoth, M. Asam, B. Kapfelsperger, J. Berkner, B. Eisener, W. Osterreicher, E. Rampf, A. Scholtz, B. Klepser

引用次数: 2

Abstract

A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915MHz and 1710-1910MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a bias-control circuit for power control, band select and mode dependent quiescent currents. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak PAE is 56 % for low-band and 44 % for high-band.

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四频带GSM/ edge兼容sige双极功率放大器，在低/高频带56% / 44% PAE下输出功率为35.9 dBm / 32.3 dBm

采用0.35 μ m SiGe-Bipolar技术，实现了824-915MHz和1710-1910MHz频段的集成四频GSM/EDGE射频功率放大器。该芯片集成了两个单端3级功率放大器和一个用于功率控制、频带选择和模式相关静态电流的偏置控制电路。在3.3 V时，830mhz的饱和输出功率为35.9 dBm, 1710mhz的饱和输出功率为32.3 dBm。相应的峰值PAE在低频段为56%，在高频段为44%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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