发布求助
文献互助 智能选刊 最新文献

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)最新文献

筛选
英文 中文
RF-pFET in fully depleted SOI demonstrates 420 GHz FT rf - fet在完全耗尽SOI中显示420 GHz FT
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969023
J. Watts, K. Sundaram, K. Chew, S. Lehmann, S. N. Ong, W. Chow, L. Chan, J. Mazurier, C. Schwan, Y. Andee, T. Feudel, L. Pirro, E. Erben, E. Nowak, E. Smith, E. Bazizi, T. Kammler, Richard Taylor, B. Rice, D. Harame
{"title":"RF-pFET in fully depleted SOI demonstrates 420 GHz FT","authors":"J. Watts, K. Sundaram, K. Chew, S. Lehmann, S. N. Ong, W. Chow, L. Chan, J. Mazurier, C. Schwan, Y. Andee, T. Feudel, L. Pirro, E. Erben, E. Nowak, E. Smith, E. Bazizi, T. Kammler, Richard Taylor, B. Rice, D. Harame","doi":"10.1109/RFIC.2017.7969023","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969023","url":null,"abstract":"We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133982665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 27.9–53.5-GHz transformer-based injection-locked frequency divider with 62.9% locking range 基于27.9 - 53.5 ghz变压器的注入锁定分频器，锁定范围为62.9%
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969083
Jingzhi Zhang, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang
{"title":"A 27.9–53.5-GHz transformer-based injection-locked frequency divider with 62.9% locking range","authors":"Jingzhi Zhang, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang","doi":"10.1109/RFIC.2017.7969083","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969083","url":null,"abstract":"An ultra-wide locking range transformer-based injection-locked frequency divider (ILFD) is presented. By making use of a 4th-order transformer-based resonator and an inductive gain peaking technique, the proposed ILFD can achieve high performance in terms of wide locking range and low power consumption. Fabricated in a standard 65nm CMOS process with a core area of 0.18mm2, the ILFD measures a locking range of 62.9% from 27.9 to 53.5 GHz while consuming 5.8mW from a 1V power supply. Moreover, when operating at 0.8V power supply, the proposed ILFD consumes only 3.2mW with 48.9% locking range.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130369042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
SiGe BiCMOS linear modulator drivers with 4.8-Vpp differential output swing for 120-GBaud applications SiGe BiCMOS线性调制器驱动器，4.8 vpp差分输出摆幅，适用于120 gbaud应用
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969067
R. Baker, J. Hoffman, P. Schvan, S. Voinigescu
{"title":"SiGe BiCMOS linear modulator drivers with 4.8-Vpp differential output swing for 120-GBaud applications","authors":"R. Baker, J. Hoffman, P. Schvan, S. Voinigescu","doi":"10.1109/RFIC.2017.7969067","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969067","url":null,"abstract":"Two linear, large-swing distributed amplifiers (DAs) are reported for future 120-GBaud fiber-optic systems. The measured differential gain and bandwidth are over 20 dB and 70 GHz, respectively, and the P1dB is −2.5 dBm. Eye diagram measurements with at least 4.8-Vpp differential swing were performed for NRZ signals up to a record 120 Gb/s, and with 4-PAM and 8-PAM signals up to 64 GBaud, with the symbol rate limited by the speed and ENOB of the arbitrary waveform generator. As well, a bit error rate better than 10−12 is demonstrated at 64 Gb/s.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
A high-performance Slow-Wave CPW with ESD protection for ultraflat band millimeter-Wave applications 具有ESD保护的高性能慢波CPW，适用于超平坦波段毫米波应用
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969081
Wei Gao, Handoko Linewih, S. Lim, Jian-Hsing Lee, S. Leang
{"title":"A high-performance Slow-Wave CPW with ESD protection for ultraflat band millimeter-Wave applications","authors":"Wei Gao, Handoko Linewih, S. Lim, Jian-Hsing Lee, S. Leang","doi":"10.1109/RFIC.2017.7969081","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969081","url":null,"abstract":"A high performance Slow-Wave Coplanar Waveguide (CPW) with distributed small pieces of ESD diodes in advanced CMOS process is presented to match 50Ω characteristic impedance. Optimized design of each segmented diode pairs and its Lateral Pickups experimentally achieves a very low RF loss of −1.55dB at 60GHz while passing at least 2.6kV HBM level. Its ultraflat frequency response up to 90GHz makes it also favourable for ultrafast digital I/Os with bit rate as high as 64Gb/s.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"2767 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127439869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB激光驱动器，65nm CMOS有源后端
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969068
Bozhi Yin, Nan Qi, Jingbo Shi, Xi Xiao, Daigao Chen, Miaofeng Li, Zhiyong Li, Jiangbing Du, Zuyuan He, Rui Bai, Yi Wang, Jun Zheng, Fred Chang, Huanlin Zhang, P. Chiang
{"title":"A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS","authors":"Bozhi Yin, Nan Qi, Jingbo Shi, Xi Xiao, Daigao Chen, Miaofeng Li, Zhiyong Li, Jiangbing Du, Zuyuan He, Rui Bai, Yi Wang, Jun Zheng, Fred Chang, Huanlin Zhang, P. Chiang","doi":"10.1109/RFIC.2017.7969068","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969068","url":null,"abstract":"A 32Gb/s-NRZ, 15GBaud/s-PAM4 configurable DFB Laser Diode Driver (LDD) is presented in standard 65nm CMOS. The driver employs a balanced-input, single-ended-output topology to deliver large current output, and integrates a tunable pre-emphasis to extend the bandwidth. An on-chip active back-termination (ABT) is proposed which absorbs loading reflections without sacrificing the effective modulation current. Directly wire-bonded to a DFB laser chip, the measurement results show 25.78Gb/s NRZ optical eye-diagram with 4dB Extinction Ratio (ER) and a 19.3% eye-mask margin referred to the 100G specification. The LDD delivers 60mA bias and 60mApp modulation current, consuming only 550mW power consumption.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126756582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A wideband SiGe BiCMOS transceiver chip-set for high-performance microwave links in the 5.6–43.5 GHz range 一种宽带SiGe BiCMOS收发器芯片组，用于5.6-43.5 GHz范围内的高性能微波链路
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969096
Y. Baeyens, S. Shahramian, B. Jalali, P. Roux, J. Weiner, A. Singh, M. Moretto, P. Boutet, P. Lopez
{"title":"A wideband SiGe BiCMOS transceiver chip-set for high-performance microwave links in the 5.6–43.5 GHz range","authors":"Y. Baeyens, S. Shahramian, B. Jalali, P. Roux, J. Weiner, A. Singh, M. Moretto, P. Boutet, P. Lopez","doi":"10.1109/RFIC.2017.7969096","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969096","url":null,"abstract":"In this paper we present a chip-set of 4 wideband SiGe BiCMOS transceivers optimized for the stringent specifications of various microwave links in the 5–44 GHz range. Each receiver and transmitter covers full frequency bands of 5.6–8.5 GHz, 10–15.5 GHz, 17.5–26.5 GHz and 27–43.5 GHz and demonstrates high dynamic range and excellent noise figure and linearity. Radio links demonstrate error-free operation for channel bandwidths from 7 up to 112 MHz and modulations up to 4096 QAM.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129669284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A digital mm-Wave PA architecture with Simultaneous Frequency and back-off Reconfigurability 具有同步频率和后退可重构性的数字毫米波PA结构
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969084
C. R. Chappidi, Xue Wu, K. Sengupta
{"title":"A digital mm-Wave PA architecture with Simultaneous Frequency and back-off Reconfigurability","authors":"C. R. Chappidi, Xue Wu, K. Sengupta","doi":"10.1109/RFIC.2017.7969084","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969084","url":null,"abstract":"Spectrally-efficient operation with high power and high efficiency at deep back-off will be critical for the next-generation mm-Wave transmitters for 5G and beyond. In addition, as larger non-contiguous chunks of the mm-Wave spectrum open up, dynamic frequency reconfiguration while ensuring high spectral and energy efficiency can become key towards optimal utilization of spectral resources. In this paper, we present a generalized asymmetrical multi-port combiner based network synthesis approach that enables both frequency and back-off reconfigurability in a mm-Wave power amplifier (PA) architecture to maintain high-efficiency operation with spectrally efficient codes across a wide frequency range. As a proof of concept, a silicon-based PA is presented which operates between 30–55 GHz with peak Psat of 23.7 dBm at 40 GHz and output collector efficiency (ηout) of 34.5 % and 22% at the 0 and −6 dB back-off respectively. The PA maintains ηout > 16% at −6 dB back-off across the range. Non-constant modulation is demonstrated with pulse shaping and with data rates upto 4 Gbps across the frequencies from 30–50 GHz.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125353757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A bi-directional, X-band 6-Bit phase shifter for phased array antennas using an active DPDT switch 一种双向、x波段6位移相器，用于使用有源DPDT开关的相控阵天线
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969074
Yunyi Gong, Moon-Kyu Cho, J. Cressler
{"title":"A bi-directional, X-band 6-Bit phase shifter for phased array antennas using an active DPDT switch","authors":"Yunyi Gong, Moon-Kyu Cho, J. Cressler","doi":"10.1109/RFIC.2017.7969074","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969074","url":null,"abstract":"This paper presents an X-band 6-bit phase shifter using active bi-directional double-pole, double-throw (DPDT) switches. The phase shifter is implemented in a 130-nm SiGe BiCMOS technology. Three additional tuning bits are included in the design to achieve accurate phase shifting performance. The phase shifter demonstrates a > 11.5-dB gain in both directions of operation over the 8–12 GHz frequency range, with an RMS amplitude error < 0.9 dB, an RMS phase error < 2.2°, a return loss > 10 dB and an input-referred 1 dB compression point of −15 dBm. The circuit has dimensions of 2.6 × 1.5 mm2, including pads.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125641258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power 一个透镜集成的430 GHz SiGe HBT源，辐射功率高达- 6.3 dBm
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969042
P. Hillger, J. Grzyb, S. Malz, B. Heinemann, U. Pfeiffer
{"title":"A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power","authors":"P. Hillger, J. Grzyb, S. Malz, B. Heinemann, U. Pfeiffer","doi":"10.1109/RFIC.2017.7969042","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969042","url":null,"abstract":"This paper presents a 430 GHz source implemented in a 0.13-µm SiGe BiCMOS technology with fT/fmax of 300 GHz/450 GHz. The source comprises a fundamental differential Colpitts cascode oscillator at 215 GHz driving a balanced common-collector doubler that utilizes inductive 2nd-harmonic feedback at the emitter output in order to boost the generated 2nd-harmonic current. The doubler is co-designed with a lens-coupled on-chip circular slot antenna providing the appropriate input impedance to the doubler output. In combination with a 3-mm diameter silicon-lens, the total peak radiated power is −6.3 dBm at a power dissipation of 165 mW. To the authors knowledge, the presented source shows the highest reported power for any silicon-based single-element radiator beyond 350 GHz.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132772764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias 偏置后线性和饱和区域AlGaN/GaN hemt小信号模型的本征分量变化
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI: 10.1109/RFIC.2017.7969038
Y. Hsin, Yi-nan Zhong, Zhen-wei Liu
{"title":"Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias","authors":"Y. Hsin, Yi-nan Zhong, Zhen-wei Liu","doi":"10.1109/RFIC.2017.7969038","DOIUrl":"https://doi.org/10.1109/RFIC.2017.7969038","url":null,"abstract":"Current dispersion is an issue in AlGaN/GaN HEMTs. Different methods have been reported to investigate this phenomenon. This study reports an investigation of intrinsic components from small-signal model of AlGaN/GaN HEMTs right after off-state bias in linear and saturation regions in addition to drain-lag measurement. Different variations on the intrinsic components after off-state bias in linear and saturation regions were observed after switching from off-state bias. A significant current dispersion from drain-lag measurement is related to the increase in Rds and decrease in Cds extracted from small-signal model. However, less changes in Cgs and Cgd were observed.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116491719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信