偏置后线性和饱和区域AlGaN/GaN hemt小信号模型的本征分量变化

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI:10.1109/RFIC.2017.7969038

Y. Hsin, Yi-nan Zhong, Zhen-wei Liu

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引用次数: 0

摘要

电流分散是AlGaN/GaN hemt中的一个问题。已经报道了不同的方法来研究这一现象。本研究报告了AlGaN/GaN hemt在线性和饱和区域失态偏置后的小信号模型的本征成分，以及漏极滞后测量。从关态偏置切换后，在线性区和饱和区观察到本征分量的不同变化。漏极滞后测量产生的显著的电流色散与从小信号模型中提取的Rds的增加和cd的减少有关。然而，Cgs和Cgd的变化较小。

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Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias

Current dispersion is an issue in AlGaN/GaN HEMTs. Different methods have been reported to investigate this phenomenon. This study reports an investigation of intrinsic components from small-signal model of AlGaN/GaN HEMTs right after off-state bias in linear and saturation regions in addition to drain-lag measurement. Different variations on the intrinsic components after off-state bias in linear and saturation regions were observed after switching from off-state bias. A significant current dispersion from drain-lag measurement is related to the increase in Rds and decrease in Cds extracted from small-signal model. However, less changes in Cgs and Cgd were observed.

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2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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