rf - fet在完全耗尽SOI中显示420 GHz FT

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI:10.1109/RFIC.2017.7969023

J. Watts, K. Sundaram, K. Chew, S. Lehmann, S. N. Ong, W. Chow, L. Chan, J. Mazurier, C. Schwan, Y. Andee, T. Feudel, L. Pirro, E. Erben, E. Nowak, E. Smith, E. Bazizi, T. Kammler, Richard Taylor, B. Rice, D. Harame

{"title":"rf - fet在完全耗尽SOI中显示420 GHz FT","authors":"J. Watts, K. Sundaram, K. Chew, S. Lehmann, S. N. Ong, W. Chow, L. Chan, J. Mazurier, C. Schwan, Y. Andee, T. Feudel, L. Pirro, E. Erben, E. Nowak, E. Smith, E. Bazizi, T. Kammler, Richard Taylor, B. Rice, D. Harame","doi":"10.1109/RFIC.2017.7969023","DOIUrl":null,"url":null,"abstract":"We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"RF-pFET in fully depleted SOI demonstrates 420 GHz FT\",\"authors\":\"J. Watts, K. Sundaram, K. Chew, S. Lehmann, S. N. Ong, W. Chow, L. Chan, J. Mazurier, C. Schwan, Y. Andee, T. Feudel, L. Pirro, E. Erben, E. Nowak, E. Smith, E. Bazizi, T. Kammler, Richard Taylor, B. Rice, D. Harame\",\"doi\":\"10.1109/RFIC.2017.7969023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

我们报告了一个420GHz的实验fet，据我们所知，这是硅fet的最高值。跨导为1800uS/um。该技术是完全耗尽的绝缘体上硅(FDSOI)与由SiGe凝聚形成的pet通道。这种出色的性能是通过布局和工艺优化的结合来实现的，这可以最大限度地减少电容并最大化通道上的压缩应变。该技术具有高k金属栅极和短栅极长度(20nm绘制)，以及高迁移率的SiGe通道。

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RF-pFET in fully depleted SOI demonstrates 420 GHz FT

We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.

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2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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