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2006 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Spectral Properties and dynamics of carriers in Si quantum dots in SiN matrices SiN矩阵中Si量子点载流子的光谱特性和动力学
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429866
L. Dao, J. Davis, P. Hannaford, Y. Cho, M. Green, E. Cho
{"title":"Spectral Properties and dynamics of carriers in Si quantum dots in SiN matrices","authors":"L. Dao, J. Davis, P. Hannaford, Y. Cho, M. Green, E. Cho","doi":"10.1109/COMMAD.2006.4429866","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429866","url":null,"abstract":"Femtosecond two-color spectrally-resolved nonlinear spectroscopy is used to study the dynamics of excited carriers in Si quantum dot structures embedded in SiN. Ultrashort population relaxation times of < 400 fs and ~ 6-10 ps are measured and discussed in the context of the different contributions from zero-phonon and transverse optical and transverse acoustic phonon-assisted transitions.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127129006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Chaotic Semiconductor Laser Diodes 混沌半导体激光二极管分析
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429906
J. Toomey, D. Kane
{"title":"Analysis of Chaotic Semiconductor Laser Diodes","authors":"J. Toomey, D. Kane","doi":"10.1109/COMMAD.2006.4429906","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429906","url":null,"abstract":"Developments in measurement equipment bandwidth and memory have allowed standard chaotic time series analysis of the multi-GHz output power fluctuations of a semiconductor laser operating chaotically. An investigation into the effect of noise shows the degradation of this analysis at low signal-to-noise ratios.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116430096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Lifetime Prediction of N-MOS Transistor Due to Hot Carrier Effect 基于热载子效应的N-MOS晶体管寿命预测研究
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429941
I. Ahmad, Z. Kornain, M. Idros
{"title":"Study of Lifetime Prediction of N-MOS Transistor Due to Hot Carrier Effect","authors":"I. Ahmad, Z. Kornain, M. Idros","doi":"10.1109/COMMAD.2006.4429941","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429941","url":null,"abstract":"This study discusses a technique to define the reliability and predict the lifetime of NMOS transistor through stressing and analyzing process by using Agilent 4070 Series equipment and xHCI software at wafer level. The stressing process uses direct current stressing method while Takeda and Hu models are used in analysis process. The result of the experiment is in the graph form and it depends on the analysis method which is can be referred to both Takeda and Hu models. The minimum lifetime prediction was 860 hours by using Takeda model as compared to 790 hours using Hu model. The different result between Takeda and Hu model was about 8% only and this allowed both Takeda and Hu models to be used in lifetime prediction of NMOS transistor. For the conclusion, by referring to this lifetime prediction graph, any operating voltage of transistor can predict the lifetime.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122499186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Quantum-dot Field Programmable Gate Array: enhanced routing 量子点现场可编程门阵列:增强路由
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429895
A. Jazbec, N. Zimic, I. L. Bajec, P. Pecar, M. Mraz
{"title":"Quantum-dot Field Programmable Gate Array: enhanced routing","authors":"A. Jazbec, N. Zimic, I. L. Bajec, P. Pecar, M. Mraz","doi":"10.1109/COMMAD.2006.4429895","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429895","url":null,"abstract":"FPGA (field programmable gate array) architecture contains configurable logic blocks (CLB) and programmable interconnects. CLB is used to implement most of the logic in FPGA. A hierarchy of programmable interconnects called programmable switch matrix (PSM) allows the logic blocks of FPGA to be interconnected as needed by the system designer. Logic blocks and interconnects can be programmed after the manufacturing process by the customer/designer so that FPGA can perform whatever logical function is needed. Wherever a vertical and a horizontal line intersect there is a switch matrix interconnect point. In this article FPGA based on quantum-dot cellular automata (QCA) technology is presented. The research is dedicated mostly to PSM.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114040330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Single and multi-array GRIN lenses from porous silicon 单阵列和多阵列GRIN透镜从多孔硅
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429927
S. Ilyas, M. Gal
{"title":"Single and multi-array GRIN lenses from porous silicon","authors":"S. Ilyas, M. Gal","doi":"10.1109/COMMAD.2006.4429927","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429927","url":null,"abstract":"Intensive research for more than a decade has demonstrated that porous silicon (PSi) can be an excellent alternative material for multilayer optical devices, such as Bragg mirrors, microcavities and filters. In this paper, we shall describe a new application of PSi. We have designed, fabricated and tested various types of PSi based graded refractive index (GRIN) lenses. These planar micro-lenses are embedded in the Si wafer and have made-to-order focal lengths. Our fabrication technique allows the manufacture of a single lens or an array of lenses with variable focal length. The design opens the possibility of integrating the GRIN lenses with existing Si based optical devices such as detectors and waveguides.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":" 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120830665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Coherent dynamics of excitons and biexcitons in intermixed ZnO/Zn1-xMgxO quantum wells by ion implantation 离子注入ZnO/Zn1-xMgxO混合量子阱中激子和双激子的相干动力学
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429869
J.A. Davis, L. Dao, X. Wen, P. Hannaford, V. Coleman, H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano
{"title":"Coherent dynamics of excitons and biexcitons in intermixed ZnO/Zn1-xMgxO quantum wells by ion implantation","authors":"J.A. Davis, L. Dao, X. Wen, P. Hannaford, V. Coleman, H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano","doi":"10.1109/COMMAD.2006.4429869","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429869","url":null,"abstract":"We have performed one and two colour, spectrally resolved four-wave mixing (FWM) experiments on a series of ZnO/Zn1-xMgxO quantum wells with different oxygen ion implantation doses. The results show that at room temperature and with resonant excitation, excitonic coherences are maintained beyond the duration of the laser pulse. A transient signal observed at negative delays in the two-colour experiments is attributed to biexcitonic coherence. The use of the two colours allows the purely biexcitonic contribution to be resolved from any other many-body or excitonic contributions at negative delays; therefore the transient signal observed indicates the creation of biexcitons in the ZnO quantum well at room temperature. Coherence times as long as 480 fs at room temperature are found for both excitons and biexcitons and are shown to be independent of implantation dose.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121641224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A CMOS Compatible MEMS-based Voltage Multiplier for On-chip Generation of Large DC Voltages 用于片上产生大直流电压的CMOS兼容mems电压倍增器
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429894
P. Valizadeh, Yi Yang, P. Famouri
{"title":"A CMOS Compatible MEMS-based Voltage Multiplier for On-chip Generation of Large DC Voltages","authors":"P. Valizadeh, Yi Yang, P. Famouri","doi":"10.1109/COMMAD.2006.4429894","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429894","url":null,"abstract":"Operation of many electrostatically-activated MEMS devices, such as signal processors and inertia! sensors, is reliant on the on-chip availability of large DC voltage (>50 V). Although, voltage multipliers are suitable structures for achieving high DC voltages, the reduced junction breakdown-voltage of today's CMOS technology and body-effect complications restrict the maximum output voltage of these integrated circuits to voltages lower than the required. In order to circumvent these restrictions, a micro-electromechanical switch architecture is proposed to replace the ordinary MOS-based voltage multipliers. In this paper, required modifications to the conventional voltage multiplier architecture are proposed. A study on the suitable switch configuration is also reported.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124133902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Temperature Growth of A1N thin films on ZnO templates prepared on Ak2O3 substrates 在Ak2O3衬底上制备的ZnO模板上低温生长A1N薄膜
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429904
I. Im, Jin-sub Park, T. Minegishi, Seunghwan Park, T. Hanada, Jiho Chang, D. Oh, M. Cho, T. Yao
{"title":"Low-Temperature Growth of A1N thin films on ZnO templates prepared on Ak2O3 substrates","authors":"I. Im, Jin-sub Park, T. Minegishi, Seunghwan Park, T. Hanada, Jiho Chang, D. Oh, M. Cho, T. Yao","doi":"10.1109/COMMAD.2006.4429904","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429904","url":null,"abstract":"We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400degC, which is quite low compared to the conventional growth temperature of 1000degC. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121713134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dark current modelling of midwave infrared HgCdTe gated photodiodes 中波红外HgCdTe门控光电二极管的暗电流建模
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429940
R. Westerhout, C. Musca, J. Antoszewski, J. Dell, L. Faraone
{"title":"Dark current modelling of midwave infrared HgCdTe gated photodiodes","authors":"R. Westerhout, C. Musca, J. Antoszewski, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2006.4429940","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429940","url":null,"abstract":"HgCdTe midwave-infrared gated photodiodes were studied both experimentally and theoretically to determine the dark current mechanisms present under different surface conditions. By modifying HgCdTe photodiode equations to account for surface band-bending we are able obtain a first-order approximation to the behaviour of these gated photodiodes. A good fit to the data has been obtained for band-to-band tunnelling and surface generation-recombination current, but not for trap-assisted-tunnelling (TAT) current. This is attributed to the exclusion of interface states in the model, the complicated TAT behaviour, as well as two-dimensional effects.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117325979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Poisson-Schrödinger Model in the Analysis of Coupled Effects in Quantum Well Nanostructures 量子阱纳米结构耦合效应分析中的Poisson-Schrödinger模型
2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI: 10.1109/COMMAD.2006.4429936
R. Mahapatra, R. Melnik, M. Willatzen, B. Lassen, L. L. Y. Voon
{"title":"Poisson-Schrödinger Model in the Analysis of Coupled Effects in Quantum Well Nanostructures","authors":"R. Mahapatra, R. Melnik, M. Willatzen, B. Lassen, L. L. Y. Voon","doi":"10.1109/COMMAD.2006.4429936","DOIUrl":"https://doi.org/10.1109/COMMAD.2006.4429936","url":null,"abstract":"In this contribution, we implement a self-consistent procedure for the solution of the Poisson-Schrodinger model applied here for the analysis of coupled effects in wide bandgap wurtzite heterostructures. Such effects are demonstrated on examples for three-layer systems, in particular AlN/GaN quantum well heterojunctions, which are promising components in a number of optoelectronic device applications. A major emphasis is given to the effects of boundary conditions, piezoelectricity and spontaneous polarization.","PeriodicalId":347755,"journal":{"name":"2006 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132097725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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