Spectral Properties and dynamics of carriers in Si quantum dots in SiN matrices

Abstract

Femtosecond two-color spectrally-resolved nonlinear spectroscopy is used to study the dynamics of excited carriers in Si quantum dot structures embedded in SiN. Ultrashort population relaxation times of < 400 fs and ~ 6-10 ps are measured and discussed in the context of the different contributions from zero-phonon and transverse optical and transverse acoustic phonon-assisted transitions.