SiN矩阵中Si量子点载流子的光谱特性和动力学

2006 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2006-12-01 DOI:10.1109/COMMAD.2006.4429866

L. Dao, J. Davis, P. Hannaford, Y. Cho, M. Green, E. Cho

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引用次数: 0

摘要

利用飞秒双色光谱分辨非线性光谱技术研究了Si量子点结构中受激载流子的动力学特性。测量了< 400fs和~ 6- 10ps的超短种群弛豫时间，并在零声子、横向光学和横向声学声子辅助跃迁的不同贡献背景下进行了讨论。

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Spectral Properties and dynamics of carriers in Si quantum dots in SiN matrices

Femtosecond two-color spectrally-resolved nonlinear spectroscopy is used to study the dynamics of excited carriers in Si quantum dot structures embedded in SiN. Ultrashort population relaxation times of < 400 fs and ~ 6-10 ps are measured and discussed in the context of the different contributions from zero-phonon and transverse optical and transverse acoustic phonon-assisted transitions.

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2006 Conference on Optoelectronic and Microelectronic Materials and Devices

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