2016 International Conference on Emerging Trends in Communication Technologies (ETCT)最新文献_第5页

Performance analysis of dual gate OTFT using different gate dielectric materials 采用不同栅介质材料的双栅OTFT性能分析

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882961

A. K. Baliga, B. Kumar, Yamini Pandey

{"title":"Performance analysis of dual gate OTFT using different gate dielectric materials","authors":"A. K. Baliga, B. Kumar, Yamini Pandey","doi":"10.1109/ETCT.2016.7882961","DOIUrl":"https://doi.org/10.1109/ETCT.2016.7882961","url":null,"abstract":"Significant research work is carried out at present for performance enhancement of organic devices and circuits that has become now an alternative candidate of flexible electronics technology. This research paper includes the depth analysis of a dual gate organic thin film transistor (DG-OTFT) because it has better performance in comparison to single gate OTFT structure. Subsequently, the impact of different materials for top gate dielectric is carried out, wherein, one device uses Parylene as top insulator while other device uses plasma-enhanced atomic layer deposition (PEALD) aluminum oxide (Al2O3). The performance analysis of both DG-OTFT in terms of subthreshold slope, threshold voltage, current on-off ratio and mobility is carried out using Atlas 2-D numerical device simulator. Device with Parylene organic dielectric material is observed to have better performance in comparison to its counterpart. Besides this, a comparison of performance in various modes of dual gate OTFT operation is discussed in this paper. It is observed that the dual gate mode operation shows better performance in comparison to other modes of operation.","PeriodicalId":340007,"journal":{"name":"2016 International Conference on Emerging Trends in Communication Technologies (ETCT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116991913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A framework to manage Trust in Internet of Things 物联网信任管理框架

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882970

Avani Sharma, E. Pilli, A. P. Mazumdar, Mahesh Chandra Govil

{"title":"A framework to manage Trust in Internet of Things","authors":"Avani Sharma, E. Pilli, A. P. Mazumdar, Mahesh Chandra Govil","doi":"10.1109/ETCT.2016.7882970","DOIUrl":"https://doi.org/10.1109/ETCT.2016.7882970","url":null,"abstract":"The proliferation of new technologies and enhanced communication protocols rising expectations of internet users towards ubiquitous connectivity. Internet of Things (IoT) is an evolving technology that facilitates ubiquitous communication between uniquely identifiable heterogeneous physical objects seamlessly through the internet. Although, lots of efforts have been made to adopt IoT globally, its deployment suffers various research challenges. A critical issue that adversely affects the performance of IoT is Security. Inherent characteristics of IoT environment like limited resources, wireless channel, heterogeneous communication protocols, battery operated devices etc. restrict the use of traditional security solutions for IoT environment. Trust Management is an important aspect of security which ensures the reliability of the system by analyzing the behaviour of devices over the time to capture their malicious activities. This paper is intended to introduce about the importance of Trust Management over Security and Privacy in uncertain environments like IoT. In this paper, we present a generic framework to manage Trust considering all the qualitative and quantitative parameters. The paper also highlights the major requirement that needs to be considered while embedding Trust Management with IoT.","PeriodicalId":340007,"journal":{"name":"2016 International Conference on Emerging Trends in Communication Technologies (ETCT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128047796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

A broker based framework for federated Cloud environment 用于联邦云环境的基于代理的框架

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882979

S. Chauhan, E. Pilli, R. Joshi

引用次数: 8

Detection of retinal blood vessels and reduction of false microaneurysms for diagnosis of diabetic retinopathy 检测视网膜血管及减少假微动脉瘤对糖尿病视网膜病变的诊断价值

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882953

Rahul Chauhan, Anita Uniyal, V. P. Dubey

引用次数: 4

Modeling error effect on performance of a second order delayed process model 建模误差对二阶延迟过程模型性能的影响

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882926

Jagriti Uniyal, Monalisa Joshi, P. Juneja

引用次数: 3

Wide band waveguide fed linearly polarized MM wave omnidirectional antenna 宽带波导馈电线极化毫米波全向天线

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882928

P. K. Verma, Raj Kumar, Mahakar Singh

引用次数: 1

Impact of variation in gate line spacing and active layer thickness on performance of organic static induction transistor 栅极线间距和有源层厚度变化对有机静电感应晶体管性能的影响

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882985

A. K. Baliga, B. Kumar, Srishti

引用次数: 0

A compact dualband bandpass-to-bandstop tunable filter for wireless applications 一种紧凑的双频带通带阻可调滤波器，用于无线应用

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882998

Tulika Sinha, A. Pandey, R. Chauhan

引用次数: 2

Performance analysis of Silicon-On-Nothing MOSFET under 100nm technology nodes 无硅MOSFET在100nm工艺节点下的性能分析

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882986

P. Lakhera, S. Sundriyal, B. Kumar

{"title":"Performance analysis of Silicon-On-Nothing MOSFET under 100nm technology nodes","authors":"P. Lakhera, S. Sundriyal, B. Kumar","doi":"10.1109/ETCT.2016.7882986","DOIUrl":"https://doi.org/10.1109/ETCT.2016.7882986","url":null,"abstract":"In this paper, we inspect and analyze the performance, electrical response and schematic of silicon-on-nothing MOSFET at 45nm and 35nm channel length by utilizing Silvaco TCAD simulator. Eventually, the parameter extraction analysis is experienced in terms of leakage current, trans-conductance, Drain Induced Barrier Lowering (DIBL), threshold voltage and on-off current ratio. Although, the main advantage of simulating SON MOSFET is that it works efficiently for sub 100nm technology nodes and minimizes short channel effects (SCE) upto greater extent. Additionally, SON MOSFET gives minimum power dissipation, lesser leakage current, and minimizes self-heating issues by incorporating an air dielectric layer which have lower dielectric value in comparison to Silicon dioxide dielectric layer. The main reason for finding an alternative for MOSFET is that, in MOSFET it is immensely unfortunate to get minimum leakage current value and lower length for the channel layer. Therefore, SON structure is incorporated in-place of bulk MOSFET that overcomes all these problems below 100nm channel length. Also, due to rapid and continuous development in the nanotechnology research area, it is extremely essential to have smaller size of semiconductor devices so that they generate better outcomes at different nanotechnology nodes, i.e. 60nm, 50nm, 45nm, 35nm, 30nm, 22nm etc. In future research, SON MOSFET will provide the best alternative to semiconductor and nanotechnology industry.","PeriodicalId":340007,"journal":{"name":"2016 International Conference on Emerging Trends in Communication Technologies (ETCT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117137150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Physical layer security in half-duplex multi-hop relaying system 半双工多跳中继系统的物理层安全性

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI: 10.1109/ETCT.2016.7882988

R. Nirala, S. S. Chauhan

引用次数: 1