Performance analysis of dual gate OTFT using different gate dielectric materials

2016 International Conference on Emerging Trends in Communication Technologies (ETCT) Pub Date : 2016-11-01 DOI:10.1109/ETCT.2016.7882961

A. K. Baliga, B. Kumar, Yamini Pandey

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Abstract

Significant research work is carried out at present for performance enhancement of organic devices and circuits that has become now an alternative candidate of flexible electronics technology. This research paper includes the depth analysis of a dual gate organic thin film transistor (DG-OTFT) because it has better performance in comparison to single gate OTFT structure. Subsequently, the impact of different materials for top gate dielectric is carried out, wherein, one device uses Parylene as top insulator while other device uses plasma-enhanced atomic layer deposition (PEALD) aluminum oxide (Al2O3). The performance analysis of both DG-OTFT in terms of subthreshold slope, threshold voltage, current on-off ratio and mobility is carried out using Atlas 2-D numerical device simulator. Device with Parylene organic dielectric material is observed to have better performance in comparison to its counterpart. Besides this, a comparison of performance in various modes of dual gate OTFT operation is discussed in this paper. It is observed that the dual gate mode operation shows better performance in comparison to other modes of operation.

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采用不同栅介质材料的双栅OTFT性能分析

目前，有机器件和电路的性能增强已经成为柔性电子技术的备选方案，这方面的研究工作非常重要。本文对双栅有机薄膜晶体管(DG-OTFT)进行了深入的分析，因为它比单栅有机薄膜晶体管结构具有更好的性能。随后，研究了不同材料对顶栅介质的影响，其中一种器件采用聚对二甲苯作为顶绝缘体，另一种器件采用等离子体增强原子层沉积(PEALD)氧化铝(Al2O3)作为顶绝缘体。利用Atlas二维数值器件模拟器对两种DG-OTFT在阈下斜率、阈值电压、电流通断比和迁移率等方面进行了性能分析。采用聚对二甲苯有机介电材料的器件具有较好的性能。此外，本文还比较了双栅OTFT在不同工作模式下的性能。结果表明，双栅极工作模式比其他工作模式具有更好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 International Conference on Emerging Trends in Communication Technologies (ETCT)

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