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2006 IEEE Compound Semiconductor Integrated Circuit Symposium最新文献

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Single-Chip 24-GHz Synthesizer for a Radar Application 用于雷达的单片24ghz合成器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319957
R. Kozhuharov, A. Jirskog, N. Penndal, H. Zirath
{"title":"Single-Chip 24-GHz Synthesizer for a Radar Application","authors":"R. Kozhuharov, A. Jirskog, N. Penndal, H. Zirath","doi":"10.1109/CSICS.2006.319957","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319957","url":null,"abstract":"The design, implementation and testing of an MMIC 24 GHz synthesizer for radar distance sensor applications is presented. An oscillator is integrated on one chip together with a buffer amplifier, a power splitter and a receiver mixer. The chip is fabricated in GaAs mHEMT technology and has an area of 3.8 times 2 mm. The VCO is a varactor-tuned push-push oscillator with a tuning range of 1.4 GHz at 24 GHz. The measured output power at the transmitter output of the chip is 10 dBm and the measured phase noise is -98 dBc/Hz at 1 MHz offset frequency. The chip also provides half the LO frequency to a PLL circuit","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130179882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 1.2V, 60-GHz radio receiver with on-chip transformers and inductors in 90-nm CMOS 一个1.2V, 60 ghz无线电接收机与片上变压器和电感在90纳米CMOS
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319876
D. Alldred, B. Cousins, S. Voinigescu
{"title":"A 1.2V, 60-GHz radio receiver with on-chip transformers and inductors in 90-nm CMOS","authors":"D. Alldred, B. Cousins, S. Voinigescu","doi":"10.1109/CSICS.2006.319876","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319876","url":null,"abstract":"This paper describes an integrated 60-GHz receiver in 90-nm CMOS including an LNA and downconversion mixer as well as LO and IF buffers. Transformer baluns are used for S/D conversion of the RF and LO signals to allow for conventional double-balanced mixing. The single-ended downconversion gain of a 60 GHz signal to a 5 GHz IF is 16 dB with an input compression point of-21 dBm while consuming 60 mW of power. The DSB noise figure is below 7 dB over the entire IF bandwidth which is greater than 1 GHz. The use of spiral inductors and transformers as matching elements resulted in a die area of only 600 mum times 475 mum including pads","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132192997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
A 70 Gbps 16:1 Multiplexer and a 60 Gbps 1:16 Demultiplexer in a SiGe BiCMOS Technology SiGe BiCMOS技术中的70gbps 16:1多路复用器和60gbps 1:16解路复用器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319936
B. Randall, S. Currie, K. Fritz, G.D. Rash, J. L. Fasig, B. Gilbert, E. Daniel
{"title":"A 70 Gbps 16:1 Multiplexer and a 60 Gbps 1:16 Demultiplexer in a SiGe BiCMOS Technology","authors":"B. Randall, S. Currie, K. Fritz, G.D. Rash, J. L. Fasig, B. Gilbert, E. Daniel","doi":"10.1109/CSICS.2006.319936","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319936","url":null,"abstract":"The authors present circuits for at-rate processing of high speed serial data for optical communication applications, implemented in the IBM 8HP SiGe BiCMOS technology. Specifically, the authors describe a 16:1 multiplexer and a 1:16 demultiplexer, each assembled into a package designed to support 80 Gbps data rates. The maximum speed of the packaged components (multiplexer: 70 Gbps, demultiplexer: 60 Gbps) is among the highest reported to date for this generation SiGe technology, particularly for circuits with this level of complexity (>10,000 transistors)","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116392933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Physics of Reliability for High Voltage AlGaN/GaN HFET's 高压AlGaN/GaN HFET可靠性的物理学研究
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319925
R. Trew, Y. Liu, W. Kuang, G. Bilbro
{"title":"The Physics of Reliability for High Voltage AlGaN/GaN HFET's","authors":"R. Trew, Y. Liu, W. Kuang, G. Bilbro","doi":"10.1109/CSICS.2006.319925","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319925","url":null,"abstract":"High voltage HFET's fabricated from nitride semiconductors utilizing the AlGaN/GaN heterojunction demonstrate excellent RF performance with RF output power greater than an order of magnitude higher than available from GaAs and InP based devices. However, the nitride devices demonstrate a reliability problem where the dc current and RF output power continually decrease as a function of time. The reliability problem is related to the conduction characteristics of the gate electrode and an electron tunneling mechanism where electrons leak from the gate to the surface of the semiconductor. In this work the physics responsible for this behavior are investigated and described","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115522732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A Nonlinear Electronic Equalizer Implemented in InGaP/GaAs HBT Technology for Dispersion Compensation of Gigabit Optical Fiber Links 采用InGaP/GaAs HBT技术实现的千兆光纤链路色散补偿非线性电子均衡器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319931
A. Metzger, P. Asbeck
{"title":"A Nonlinear Electronic Equalizer Implemented in InGaP/GaAs HBT Technology for Dispersion Compensation of Gigabit Optical Fiber Links","authors":"A. Metzger, P. Asbeck","doi":"10.1109/CSICS.2006.319931","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319931","url":null,"abstract":"This work describes a high-speed nonlinear fiber dispersion equalizer circuit implemented in InGaP/GaAs HBT technology. The equalizer IC consists of 3 independent and bypass-able 2-bit analog to digital converters and a 64-bit programmable look up table memory. The equalizer acts as a fully programmable pattern recognition circuit, designed to compensate serial links with data rates of above 5 Gigabits per second. Demultiplexing and parallel processing at low data rates is avoided as the LUT memory based architecture enables the circuit to directly process data at the incoming bit rate. Performance is evaluated with pattern tests in read mode up to 5GHz. This is very close to the maximum flip-flop clocking rate for the technology employed","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121939398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InGaP-Plus - A major advance in GaAs HBT Technology InGaP-Plus - GaAs HBT技术的重大进展
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319891
A. Gupta, B. Peatman, M. Shokrani, W. Krystek, T. Arell
{"title":"InGaP-Plus - A major advance in GaAs HBT Technology","authors":"A. Gupta, B. Peatman, M. Shokrani, W. Krystek, T. Arell","doi":"10.1109/CSICS.2006.319891","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319891","url":null,"abstract":"InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand. The process uses previously developed process modules and is only moderately more complex than a stand-alone HBT flow. Tens of millions of WLAN and cellular handset PAs have been manufactured using InGaP-Plus with yields comparable to HBT-only processes. This new process technology offers new degrees of freedom in RFIC design and has become the technology of choice for new products. An example of one such product is provided in this paper","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116920423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Fundamental Difference of Power Handling Between CE and CB HBTs CE和CB HBTs功率处理的根本区别
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319892
Hui Li, N. Jiang, Guogong Wang, Z. Ma
{"title":"Fundamental Difference of Power Handling Between CE and CB HBTs","authors":"Hui Li, N. Jiang, Guogong Wang, Z. Ma","doi":"10.1109/CSICS.2006.319892","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319892","url":null,"abstract":"Fundamental power handling of common-emitter (CE) and common-base (CB) (SiGe) power HBTs is compared by measuring their dynamic load lines under large-signal operation with input and output matched for maximum output power (Pout). The distinct difference of load lines indicates the fundamental different power amplification mechanisms between the two configurations. It is shown that under voltage-source bias the CE configuration always provides higher (saturated) output power (Pout) than the CB configuration, while higher power gain and power added efficiency (PAE) could be obtained from the CB configuration than the CE configuration before entering the power saturation region","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124862696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low Noise Direct Detection Sensors for Millimeter Wave Imaging 用于毫米波成像的低噪声直接检测传感器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319937
J. Lynch, J. Schulman, H. Moyer
{"title":"Low Noise Direct Detection Sensors for Millimeter Wave Imaging","authors":"J. Lynch, J. Schulman, H. Moyer","doi":"10.1109/CSICS.2006.319937","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319937","url":null,"abstract":"As millimeter wave electronic component technologies have matured, passive millimeter wave (mmW) imaging using direct detection is emerging as a cost effective approach to imaging through obscuring materials such as clothing for concealed weapons detection or sand for rotorcraft landing. This paper reviews the basic operation of W band direct detection receivers, and describes progress made at HRL in the development of mmW front end IC components. InP HEMT LNAs provide high gain and low noise, appropriate for high sensitivity front ends that require relatively short integration times. Sb-based MMIC detectors provide high sensitivity and low noise, relaxing the gain requirements of the LNA. Finally, promising results of the ongoing DARPA MIATA program demonstrate reasonable sensitivity of a purely passive imaging module, the first step toward imaging without the need for LNAs","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128107159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Notice of Violation of IEEE Publication PrinciplesLow Voltage 12.5Gb/s SiGe BiCMOS Laser Diode Driver Using a Bias Current Modulation Canceling Technique 使用偏置电流调制对消技术的低压12.5Gb/s SiGe BiCMOS激光二极管驱动器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319930
A. Maxim
{"title":"Notice of Violation of IEEE Publication PrinciplesLow Voltage 12.5Gb/s SiGe BiCMOS Laser Diode Driver Using a Bias Current Modulation Canceling Technique","authors":"A. Maxim","doi":"10.1109/CSICS.2006.319930","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319930","url":null,"abstract":"A low supply voltage fully-integrated 12.5Gb/s laser diode driver IC was realized in a 0.2mum 60GHz fT SiGe BiCMOS process. A three-fold power consumption reduction versus existing drivers was achieved by using a 3.3V supply and dynamic emitter followers having a local positive feedback loop that boosts the drive strength without taking additional supply power. Low voltage operation was achieved by replacing the tail current source of the output switch with a resistor and setting the current with a common-mode feedback loop. A direct on-chip summation of bias and modulation currents was realized by using a bias modulation canceling circuit. Laser diode driver IC specifications include: 3-3.6V supply voltage, <70mA supply current (excluding output current), 20-100mA modulation current range, 1-100mA bias current range, <12psp-p deterministic jitter and 1.5times1.5mm2 die area","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127875053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimizing Technology Choices for Handsets 优化手机的技术选择
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319903
J. Neal
{"title":"Optimizing Technology Choices for Handsets","authors":"J. Neal","doi":"10.1109/CSICS.2006.319903","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319903","url":null,"abstract":"Summary form only given. The mobile handset is arguably the most significant consumer device driving the use of compound semiconductors and other technologies. We estimate that in this year alone over two billion square millimeters of GaAs will be shipped into mobile handsets. There is no question that the dominant technology for implementing power amplifiers for GSM, GPRS, EDGE, CDMA, WCDMA, HSPA and WiFi is now GaAs and InGaP/GaAs. Switches using GaAs pHEMT, as well as GaAs low noise amplifiers also see significant use in the handset. CMOS is becoming the technology of choice for the bulk of the other cellular handset functions such as direct conversion receivers, modulators, synthesizers, VCOs, PA regulators, DC-DC converters, as well as the digital baseband and applications processors. MEMS is becoming attractive for future use in switches and filters as it offers the benefits of lower insertion loss and ease of integration. This presentation addresses the various technologies used today inside mobile handsets. Further, integration options are presented that will lead to the optimum combination of existing and future technologies needed to meet the ever-growing demands for cheaper, smaller and more reliable handsets","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127707956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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