2006 IEEE Compound Semiconductor Integrated Circuit Symposium最新文献_第6页

A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits E/ d模式AlGaN/GaN HEMT DCFL集成电路的平面集成工艺

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319949

Ruonan Wang, Yong Cai, Z. Cheng, C. Tang, K. Lau, Kevin J. Chen

{"title":"A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits","authors":"Ruonan Wang, Yong Cai, Z. Cheng, C. Tang, K. Lau, Kevin J. Chen","doi":"10.1109/CSICS.2006.319949","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319949","url":null,"abstract":"We demonstrate a new planar fabrication technology for integrating enhancement/depletion (E/D) mode AlGaN/GaN HEMTs using fluoride-based plasma treatment techniques. The CF4 plasma treatment is used in two separate steps to achieve two objectives: 1) active device isolation; and 2) threshold voltage control for the E-mode HEMT formation. By using the planar process, the E/D-mode HEMTs are integrated on the same chip, and a direct-coupled FET logic inverter and a 17-stage ring oscillator are fabricated. Compared with the devices formed by standard mesa etching, the HEMTs by planar process have comparable DC and RF characteristics, with no obvious difference in device isolation. At a supply voltage of 3.3 V, the E/D-mode inverter shows an output swing of 2.85 V, with the logic low and logic high noise margins at 0.34 and 1.47 V. The fabricated ring oscillator yields an oscillating frequency of 159 MHz at a supply voltage of 4.5 V. After a 44 hrs thermal stress at 350degC, the devices show negligible change in DC and RF characteristics, indicating excellent thermal stability of the planar process","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128905410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits 用于光学和毫米波集成电路的先进SiGe BiCMOS和CMOS平台

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319906

P. Chevalier, D. Gloria, P. Scheer, S. Pruvost, F. Gianesello, F. Pourchon, P. Garcia, J. Vildeuil, A. Chantre, C. Gamier, O. Noblanc, S. Voinigescu, T. Dickson, E. Laskin, S. Nicolson, T. Chalvatzis, K. Yau

引用次数: 25

Reliability Study of InGaP/GaAs HBT for 28V Operation 28V工作InGaP/GaAs HBT可靠性研究

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319960

F. Hin-Fai Chau, B. Jia-Fu Lin, Yan Chen, M. Kretschmar, Chien-Ping Lee, N. Wang, Xiaopeng Sun, Wenlong Ma, S. Xu, P. Hu

引用次数: 10

GaN Wide Band Power Integrated Circuits 氮化镓宽带功率集成电路

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319885

J. Conlon, N. Zhang, M. Poulton, J. Shealy, R. Vetury, D. Green, J.D. Brown, S. Gibb

引用次数: 8

AlGaN/GaN HEMT on Diamond Technology Demonstration 金刚石技术的AlGaN/GaN HEMT演示

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319952

G. Jessen, J. Gillespie, G. Via, A. Crespo, D. Langley, J. Wasserbauer, F. Faili, D. Francis, D. Babic, F. Ejeckam, S. Guo, I. Eliashevich

引用次数: 46

A 3-34 GHz GaAs PHEMT Distributed Mixer with Low DC Power Consumption 低直流功耗的3-34 GHz GaAs PHEMT分布式混频器

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319881

Ching-Hung Chiu, K. Liang, Hong-Yeh Chang, Y. Chan

引用次数: 4

CMOS Photonics Technology Overview CMOS光子技术概述

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319929

C. Gunn

引用次数: 4

MMIC Class-F Power Amplifiers using Field-Plated AlGaN/GaN HEMTs 使用场镀AlGaN/GaN hemt的MMIC f类功率放大器

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319884

Steven Gao, Hongtao Xu, Umesh K. Mishra, R. A. York

引用次数: 12

X-band AlGaN/GaN HEMT with over 80W Output Power x波段AlGaN/GaN HEMT输出功率超过80W

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319950

K. Takagi, K. Masuda, Y. Kashiwabara, H. Sakurai, K. Matsushita, S. Takatsuka, H. Kawasaki, Y. Takada, K. Tsuda

引用次数: 26

An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers InGaP/GaAs融合HBT-FET (BiFET)技术及其在手机功率放大器设计中的应用

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 1900-01-01 DOI: 10.1109/csics.2006.319890

A. Metzger, P. Zampardi, M. Sun, J. Li, C. Cismaru, L. Rushing, R. Ramanathan

{"title":"An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers","authors":"A. Metzger, P. Zampardi, M. Sun, J. Li, C. Cismaru, L. Rushing, R. Ramanathan","doi":"10.1109/csics.2006.319890","DOIUrl":"https://doi.org/10.1109/csics.2006.319890","url":null,"abstract":"The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of depletion mode n-FET and GaAs HBT. The merger of bipolar and FET, or BiFET, gives an additional degree of freedom in the design of advanced power amplifiers independent of a silicon controller. This paper provides an overview of the various techniques that can be used to merge the two device technologies and then show how a merged epitaxial structure, where a FET is formed in the emitter layers of an HBT, combines functional versatility with the high volume manufacturability needed to supply millions of power amplifiers at low cost. Specific handset applications that can benefit or be enabled by BiFET are presented, such as auto-bias power amplifiers, advanced bias control with low or no voltage reference, on-chip power detectors, and integrated operational amplifiers. When npn-only bias circuitry is limited to low voltage reference levels, HBT power amplifiers with BiFET bias stages are shown to have superior RF performance to their npn-only counterparts","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124706136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6