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2006 IEEE Compound Semiconductor Integrated Circuit Symposium最新文献

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Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate 采用35纳米栅极的InP HEMT的亚毫米波集成电路(S-MMIC)演示
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-12 DOI: 10.1109/CSICS.2006.319912
W. Deal, S. Din, V. Radisic, J. Padilla, X. Mei, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, R. Lai
{"title":"Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate","authors":"W. Deal, S. Din, V. Radisic, J. Padilla, X. Mei, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, R. Lai","doi":"10.1109/CSICS.2006.319912","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319912","url":null,"abstract":"In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300-GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133138521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Indium Antimonide Based Technology for RF Applications 基于锑化铟的射频应用技术
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319918
T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding
{"title":"Indium Antimonide Based Technology for RF Applications","authors":"T. Ashley, L. Buckle, M. Emeny, M. Fearn, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, J. Powell, A. Tang, D. Wallis, P. Wilding","doi":"10.1109/CSICS.2006.319918","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319918","url":null,"abstract":"Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so gives the prospect of extremely high frequency operation with very low power dissipation. We report uncooled transistors with cut-off frequency of 340 GHz at a source-drain voltage of 0.5 V, leading towards this goal","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117183729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Field-Plate Optimization of AlGaN/GaN HEMTs AlGaN/GaN hemt的场-板优化
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319926
V. Palankovski, S. Vitanov, R. Quay
{"title":"Field-Plate Optimization of AlGaN/GaN HEMTs","authors":"V. Palankovski, S. Vitanov, R. Quay","doi":"10.1109/CSICS.2006.319926","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319926","url":null,"abstract":"An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical geometrical variables controlling the field distribution in the channel are determined and optimized for improved device reliability using two-dimensional numerical simulations. The results are implemented in the design of devices fabricated with 600 nm down to 150 nm gate lengths. Good agreement between experimental and simulation data is achieved","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120955731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
From 100 GHz to Terahertz Electronics - Activities in Europe 从100千兆赫到太赫兹电子学-欧洲的活动
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319905
M. Schlechtweg, A. Tessmann
{"title":"From 100 GHz to Terahertz Electronics - Activities in Europe","authors":"M. Schlechtweg, A. Tessmann","doi":"10.1109/CSICS.2006.319905","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319905","url":null,"abstract":"This paper presents an overview on selected results in the area of millimeter-wave and sub-millimeter-wave integrated circuits and devices in Europe for application in the frequency range between 100 GHz and 2THz. Advanced integrated circuits for millimeter-wave applications based on metamorphic InAlAs/InGaAs HEMTs on 4\" GaAs substrates were developed and manufactured at the Fraunhofer Institute IAF. An extrinsic transit frequency of 410 GHz for 50 nm gate length devices is achieved. Two-stage low-noise amplifiers demonstrate a small signal gain of 20 dB and a noise figure of 2.4 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 21 dB at 220 GHz. These results are compatible with those achieved using state-of-the-art InP-based HEMT technologies. Recent results of HBVs (heterojunction barrier varactors), Schottky diodes and HEBs (hot-electron bolometers) for signal generation and detection up to terahertz frequencies obtained by various research groups in Europe are presented","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116128781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
CVD Diamond - The Next Generation Electronic Material CVD金刚石-下一代电子材料
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319946
E. Kohn, A. Denisenko
{"title":"CVD Diamond - The Next Generation Electronic Material","authors":"E. Kohn, A. Denisenko","doi":"10.1109/CSICS.2006.319946","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319946","url":null,"abstract":"The status of diamond electronic device structures for high power, high temperature and high frequency is reviewed and latest data are highlighted. First results on the operation in harsh environment and very high temperature suggest that besides the power handling capability, the stability, robustness and reliability may be superior to that of all other semiconductors","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114419139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Novel E-mode PHEMT Linearized Darlington Cascode Amplifier 一种新型e模PHEMT线性化达林顿级联放大器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319934
K. Kobayashi
{"title":"A Novel E-mode PHEMT Linearized Darlington Cascode Amplifier","authors":"K. Kobayashi","doi":"10.1109/CSICS.2006.319934","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319934","url":null,"abstract":"This paper reports the first results of a new Darlington cascode topology implemented with 0.5mum E-mode PHEMTs. The Darlington cascode employs active self-bias and a linearizing Darlington cascode (DCAS) circuit for achieving robust bias and enhanced gain and IP3-bandwidth performance. The Darlington cascode achieves 12.5 dB gain with a 16 GHz 3-dB BW - a 60% BW improvement over the conventional Darlington. The DCAS obtains an IP3 of 29 dBm with a 13 GHz BW - an 80% improvement in IP3-BW over the conventional Darlington approach. These improvements have been obtained without significantly compromising NF, stability, or bias robustness. The new DCAS amplifier design can be applied to other semiconductor technologies and offers an approach for compacting high microwave performance into a small area without the use of distributed techniques","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128612102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A High-Power Low-Distortion GaAs HBT Power Amplifier with 3.3 V Supply for 5-6 GHz Broadband Wireless Applications 一种用于5-6 GHz宽带无线应用的3.3 V高功率低失真GaAs HBT功率放大器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319935
T. Oka, M. Hasegawa, M. Hirata, Y. Amano, Y. Ishimaru, H. Kawamura, K. Sakuno
{"title":"A High-Power Low-Distortion GaAs HBT Power Amplifier with 3.3 V Supply for 5-6 GHz Broadband Wireless Applications","authors":"T. Oka, M. Hasegawa, M. Hirata, Y. Amano, Y. Ishimaru, H. Kawamura, K. Sakuno","doi":"10.1109/CSICS.2006.319935","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319935","url":null,"abstract":"This paper describes a 5-6 GHz band GaAs HBT power amplifier operating at 3.3 V for broadband wireless applications. In conjunction with linearizing circuit techniques, wideband matching circuits including trap circuits for 2nd harmonics allow us to achieve the high linear output power and the low distortion together with low 2nd-harmonic spurious outputs. The fabricated power amplifier exhibited linear output power levels of 21 and 22 dBm at EVM values of 2.0 and 3.0%, respectively, measured with 54 Mbps 64-QAM-OFDM signals. The 2nd harmonic spurious outputs below -35 dBc were also attained","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130068130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Ka-band High Power Frequency Doubler in SMT Package SMT封装中一种ka波段大功率倍频器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319878
S. Nam, F. Traut, J. Cuggino
{"title":"A Ka-band High Power Frequency Doubler in SMT Package","authors":"S. Nam, F. Traut, J. Cuggino","doi":"10.1109/CSICS.2006.319878","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319878","url":null,"abstract":"This paper describes the development of a packaged Ka-band high power frequency doubler. The frequency doubler MMIC is developed using 0.15mum GaAs p-HEMT technology and packaged into a low cost QFN package for SMT application. This packaged frequency doubler delivers above +22dBm saturated output power of the 2nd harmonic signal with greater than 60dBc rejection of the fundamental and 3rd harmonic signal across the 28 to 30GHz band","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133656240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High Performance Dual Recess 0.15-μm pHEMT for Multi-Function MMIC Applications 高性能双凹槽0.15 μm pHEMT多功能MMIC应用
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319920
M. Kao, S. Nayak, R. Hajji, S. E. Hillyard, A. Ketterson
{"title":"High Performance Dual Recess 0.15-μm pHEMT for Multi-Function MMIC Applications","authors":"M. Kao, S. Nayak, R. Hajji, S. E. Hillyard, A. Ketterson","doi":"10.1109/CSICS.2006.319920","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319920","url":null,"abstract":"This paper describes a dual recess 0.15-μm gate length pseudomorphic high electron mobility transistor (pHEMT) technology for multi-function MMIC applications at microwave and millimeter-wave frequencies. This 0.15-μm power pHEMT not only produces high efficiency power amplification at Ka- and Q-band but also exhibits excellent noise and third-order-intercept (TOI) performance. At 35 GHz, output power density of 0.86 W/mm, power gain of 5.6 dB, and power-added efficiencies of 38 to 44 % were demonstrated. Low noise figure of 1.0 dB at 26 GHz was also measured. Additionally, we have demonstrated a gain of 11.7 dB and a TOI of 35 dBm at 18 GHz for a 300-μm unit cell. This microwave device technology is suitable for producing high performance power amplifier, low noise receiver, high linearity, transmit/receive and multi-function MMICs.","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127383860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 100-Gb/s 1:4 Demultiplexer in InP DHBT Technology InP DHBT技术中的100gb /s 1:4解复用器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319941
J. Hallin, T. Kjellberg, T. Swahn
{"title":"A 100-Gb/s 1:4 Demultiplexer in InP DHBT Technology","authors":"J. Hallin, T. Kjellberg, T. Swahn","doi":"10.1109/CSICS.2006.319941","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319941","url":null,"abstract":"This paper presents a 1:4 demultiplexer fabricated in InP DHBT technology. The demultiplexer is verified to work up to 100 Gb/s at a supply voltage of -3.6 V consuming 2.1 W. It is a half-rate demultiplexer using multi-phase clock architecture. To verify operation up to 100 Gb/s the authors used an in-house PRBS generator chip","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114957132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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