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2006 IEEE Compound Semiconductor Integrated Circuit Symposium最新文献

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94-Gb/s 29-1 PRBS Bit Error Detector IC in InP DHBT Technology 基于InP DHBT技术的94 gb /s 29-1 PRBS误码检测芯片
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319942
T. Kjellberg, J. Hallin, T. Swahn
{"title":"94-Gb/s 29-1 PRBS Bit Error Detector IC in InP DHBT Technology","authors":"T. Kjellberg, J. Hallin, T. Swahn","doi":"10.1109/CSICS.2006.319942","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319942","url":null,"abstract":"In this paper, the authors present a bit-error detector IC for 2 9 - l PRBS signals. The IC is fabricated in InP DHBT technology and operates for input data rates up to a record high 94 Gb/s. Each detected bit-error on the input signal produces a logic transition on the output signal. The IC consumes 1.5 W from a -2.5 V supply voltage","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129929263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wideband Dual-Gate GaN HEMT Low Noise Amplifier for Front-End Receiver Electronics 用于前端电子接收机的宽带双栅GaN HEMT低噪声放大器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319921
M. Aust, Arvind K. Sharma, Y. Chen, R. Beach
{"title":"Wideband Dual-Gate GaN HEMT Low Noise Amplifier for Front-End Receiver Electronics","authors":"M. Aust, Arvind K. Sharma, Y. Chen, R. Beach","doi":"10.1109/CSICS.2006.319921","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319921","url":null,"abstract":"A highly survivable wideband low noise amplifier (LNA) for front-end receiver electronics is presented utilizing 0.2 mum AlGaN/GaN HEMT process on SiC substrate. This novel amplifier utilizes dual-gate devices with current feedback and drain bias network to attain wideband performance in terms of lower noise and higher gain. Nominal operation at 125 mA/mm at a drain voltage of 10 volts provided 12.5 to 18 dB gain and 1.3 to 2.5 dB noise figure. Due to high breakdown voltage, the amplifier is capable of better than 25 dBm of output power and can withstand an input power level approaching 38 dBm. This paper will also document performance comparison with a similar circuit using 0.15 mum pseudomorphic InGaAs/AlGaAs/GaAs HEMT low noise amplifier to demonstrate the outstanding survivability of AlGaN/GaN low noise amplifiers","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131173770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 40
3-D Micro Electro Magnetic Radio Frequency Systems (3-D MERFS) and other DARPA RF MEMS Programs 3-D微电磁射频系统(3-D MERFS)和其他DARPA RF MEMS项目
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319959
J. D. Evans
{"title":"3-D Micro Electro Magnetic Radio Frequency Systems (3-D MERFS) and other DARPA RF MEMS Programs","authors":"J. D. Evans","doi":"10.1109/CSICS.2006.319959","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319959","url":null,"abstract":"The Defense Advanced Research Projects Agency (DARPA), Microsystem Technology Office (MTO) currently sponsors a number of efforts to improve the performance of radio frequency (RF) systems using micro electromechanical systems (MEMS) technology. These include the 3-dimensional micro electromagnetic radio frequency systems (3-D MERFS), analog spectral processors (ASP), and harsh environment robust micromechanical technology (HERMIT), and micro cyrogenic coolers (MCC). In this talk, Dr. Evans provides an overview of these four efforts, focusing specifically on recent advances in the 3-D MERFS program","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133758734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Reliable Ka-band Sub-harmonic Mixer for Satellite Converters 一种可靠的卫星变换器ka波段次谐波混频器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319879
A. Ådahl, H. Zirath
{"title":"A Reliable Ka-band Sub-harmonic Mixer for Satellite Converters","authors":"A. Ådahl, H. Zirath","doi":"10.1109/CSICS.2006.319879","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319879","url":null,"abstract":"A Ka-band sub-harmonic mixer based on a novel zero bias diode is presented. The mixer provides high suppression of in-band spuriouses and is more reliable than mixers implemented with ordinary gate-Schottky diodes. The ZBD is designed in a commercially available enhancement mode MMIC process. A conversion loss of 13.5 dB and IIP3 of approximately +7 dBm is obtained at an LO power of only 4.4 dBm","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117082691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
120-GHz Tx/Rx Waveguide Modules for 10-Gbit/s Wireless Link System 用于10gbit /s无线链路系统的120ghz Tx/Rx波导模块
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319910
T. Kosugi, M. Tokumitsu, K. Murata, T. Enoki, H. Takahashi, A. Hirata, T. Nagatsuma
{"title":"120-GHz Tx/Rx Waveguide Modules for 10-Gbit/s Wireless Link System","authors":"T. Kosugi, M. Tokumitsu, K. Murata, T. Enoki, H. Takahashi, A. Hirata, T. Nagatsuma","doi":"10.1109/CSICS.2006.319910","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319910","url":null,"abstract":"This paper describes the development of wavegude modules for 120-GHz wireless applications. The MMIC in the modules were fabricated using 0.1-mum-gate InP-HEMTs and coplanar waveguides. The transmitter (Tx) module contains a Tx MMIC and a multiplier MMIC for carrier generation. The Tx MMIC contains a frequency doubler, ASK modulator, and an amplifier. Output power of the Tx module is 0 dBm. The receiver (Rx) module contains a Rx MMIC with a low-noise amplifier and ASK demodulator. For high-power operation of transmitter, we developed a power amplifier (PA) waveguide module that attaches to the Tx module. This PA module contains one-chip PA MMIC, and has 13-dBm output power with associated gain of 10.5 dB at 125 GHz. A back-to-back test of the Tx/Rx modules with and without the PA module have shown it to be fully functional at 10-Gbit/s data rate with BER = 1e-10 at -34.5-dBm and -36.1-dBm input powers for the receiver, respectively","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125466910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
Deep UV Stepper Based 0.15μm High Power 150mm GaAs pHEMT Process for Millimeter Wave Applications 基于0.15μm高功率150mm GaAs pHEMT毫米波应用的深紫外步进工艺
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319919
T. Lodhi, J. McMonagle, R.G. Davis, D. Brookbanks, S. Combe, M. Clausen, M. O'Keefe, A. Collar, J. Atherton
{"title":"Deep UV Stepper Based 0.15μm High Power 150mm GaAs pHEMT Process for Millimeter Wave Applications","authors":"T. Lodhi, J. McMonagle, R.G. Davis, D. Brookbanks, S. Combe, M. Clausen, M. O'Keefe, A. Collar, J. Atherton","doi":"10.1109/CSICS.2006.319919","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319919","url":null,"abstract":"Filtronic Compound Semiconductors has developed the first 0.15μm process on 150mm GaAs pHEMT using deep UV stepper based technology for millimeter wave applications. The use of stepper technology allows for improved throughput and yield compared to E-beam lithography. The process has an FT of 85GHz with breakdown voltage of 15V and is ideally suited for power applications up to 40GHz. The pHEMTs have demonstrated output power of more than 1W/mm that to our knowledge is the highest reported power from a 0.15μm GaAs pHEMT process","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127129108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave-Frequency InAlP-oxide/GaAs MOSFETs 微波频率InAlP-oxide/GaAs mosfet
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319874
Y. Cao, J. Zhang, T. Kosel, D. Hall, P. Fay
{"title":"Microwave-Frequency InAlP-oxide/GaAs MOSFETs","authors":"Y. Cao, J. Zhang, T. Kosel, D. Hall, P. Fay","doi":"10.1109/CSICS.2006.319874","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319874","url":null,"abstract":"GaAs-channel MOSFETs employing InAlP native oxide gate dielectrics and achieving record microwave performance are reported. Devices with 1 mum gate length demonstrate measured ft's of 17.0 GHz with fmax's of 74.8 GHz. Improved RF performance is obtained by vertical scaling of the device heterostructure to incorporate a 7.5 nm thick gate oxide layer. Despite the thin InAlP native oxide gate dielectric layer, a low gate leakage current density of 1.58 times 10 -4 A/cm2 is obtained at 1 V bias","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124708318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High Mobility III-V Mosfet Technology 高迁移率III-V型Mosfet技术
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319914
M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, P. Fejes
{"title":"High Mobility III-V Mosfet Technology","authors":"M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, P. Fejes","doi":"10.1109/CSICS.2006.319914","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319914","url":null,"abstract":"In recent years, fundamental interface issues have been overcome and GaAs MOS technology has advanced to the level of device fabrication. This development has been enabled by a molecular beam epitaxy (MBE) deposited Ga2O3 template with the unique property of unpinning the Fermi level on GaAs, and a GdGaO dielectric layer which provides required band offsets while neither disrupting the template nor creating a secondary interface. MOSFET wafers with an InGaAs channel layer are grown by MBE on III-V substrates including the high-k dielectric GdGaO/Ga2O3 stack (k cong 20). Electron mobilities exceeding 12,000 and 6,000 cm2/ Vs for sheet carrier concentration ns of about 2.5 times 1012 cm-2 have been measured on InP and GaAs based MOSFET structures, respectively. Our enhancement-mode MOSFETs employ a new, implant-free device concept, which allows one to take advantage of high mobility in MOSFET channel layers. N-channel enhancement-mode GaAs MOSFETs have been fabricated with important DC figures of merit such as maximum drain current and transconductance approaching predicted performance","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131871413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
InP DHBT IC Technology with Implanted Collector Pedestal and Electroplated Device Contacts 带有植入收集器底座和电镀器件触点的InP DHBT集成电路技术
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319893
M. Urteaga, Keisuke Shinohara, Richard Pierson, P. Rowell, B. Brar, Z. Griffith, N. Parthasarathy, M. Rodwell
{"title":"InP DHBT IC Technology with Implanted Collector Pedestal and Electroplated Device Contacts","authors":"M. Urteaga, Keisuke Shinohara, Richard Pierson, P. Rowell, B. Brar, Z. Griffith, N. Parthasarathy, M. Rodwell","doi":"10.1109/CSICS.2006.319893","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319893","url":null,"abstract":"The authors report an InP DHBT IC technology that incorporates an ion implanted N+ collector-pedestal for collector-base capacitance (C cb) reduction. The technology utilizes electroplating processes and sidewall spacers to form a high yield self-aligned base-emitter junction. Devices with 0.4 mum emitter junction widths demonstrate peak ft and fmax values of over 370 GHz. The devices demonstrate a ~35% reduction in Ccb versus HBTs with the same device footprint fabricated without a collector pedestal. A current mode logic (CML) divide-by-two circuit demonstrated a maximum operating frequency of 128 GHz, a -20% improvement versus the same design realized in a non-collector-pedestal process","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115065272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Coplanar 94 GHz Metamorphic HEMT Low Noise Amplifiers 共面94ghz变质HEMT低噪声放大器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319911
M. Karkkainen, M. Varonen, K. Halonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, M. Kantanen, T. Karttaavi, T. Narhi
{"title":"Coplanar 94 GHz Metamorphic HEMT Low Noise Amplifiers","authors":"M. Karkkainen, M. Varonen, K. Halonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, M. Kantanen, T. Karttaavi, T. Narhi","doi":"10.1109/CSICS.2006.319911","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319911","url":null,"abstract":"We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 times 1.00 mm2 and 2.25 times 1.00 mm2. The gate width of the transistor is 4times15 mum. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129352353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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