M. Karkkainen, M. Varonen, K. Halonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, M. Kantanen, T. Karttaavi, T. Narhi
{"title":"Coplanar 94 GHz Metamorphic HEMT Low Noise Amplifiers","authors":"M. Karkkainen, M. Varonen, K. Halonen, R. Weber, A. Leuther, M. Seelmann-Eggebert, M. Kantanen, T. Karttaavi, T. Narhi","doi":"10.1109/CSICS.2006.319911","DOIUrl":null,"url":null,"abstract":"We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 times 1.00 mm2 and 2.25 times 1.00 mm2. The gate width of the transistor is 4times15 mum. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2006.319911","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 times 1.00 mm2 and 2.25 times 1.00 mm2. The gate width of the transistor is 4times15 mum. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage