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Methodology for Simultaneous Noise and Impedance Matching in W-Band LNAs w波段LNAs中同时噪声和阻抗匹配的方法
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319954
S. Nicolson, S. Voinigescu
{"title":"Methodology for Simultaneous Noise and Impedance Matching in W-Band LNAs","authors":"S. Nicolson, S. Voinigescu","doi":"10.1109/CSICS.2006.319954","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319954","url":null,"abstract":"This paper presents a step-by-step methodology for simultaneous noise and input impedance matching in CMOS and SiGe W-band LNAs. This technique yields either increased gain or reduced power dissipation. Additionally, techniques to determine the optimum layout for MOSFETs in mm-wave LNAs are discussed. Measurement results in 90nm CMOS show a 1-stage 1.8V, 78GHz LNA with 3.8dB gain and 16mW power dissipation, and a 1.8V, 2-stage 94GHz LNA with 4.8dB gain, and 30mW power dissipation. In all cases S11 and S22 are lower than -10 dB","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"318 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122022055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 60
InGaP-GaAs HBT Statistical Modeling for RF Power Amplifier Designs 用于射频功率放大器设计的InGaP-GaAs HBT统计建模
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319938
J. Hu, Peter J. Zampardi, Hongxiao Shao, K. Kwok, C. Cismaru
{"title":"InGaP-GaAs HBT Statistical Modeling for RF Power Amplifier Designs","authors":"J. Hu, Peter J. Zampardi, Hongxiao Shao, K. Kwok, C. Cismaru","doi":"10.1109/CSICS.2006.319938","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319938","url":null,"abstract":"A simple statistical modeling methodology is presented for InGaP-GaAs HBTs devices and RF power amplifier circuits. The modeling approach utilizes in-line electrical parameter control data and DOE method to establish relationships between important material and model parameters. The key considerations of parameter selection are given and essential connections from device physics to model parameters are described. This statistical model allows designs that are robust to process variations and provide circuit designers with a method to de-bug design issues that can result from device variations. The authors show the background that supports this approach and demonstrate its application at both a device and circuit level","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123482654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An 80 GHz SiGe Quadrature Receiver Frontend 80ghz SiGe正交接收机前端
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319962
B. Dehlink, H. Wohlmuth, K. Aufinger, F. Weiss, A. Scholtz
{"title":"An 80 GHz SiGe Quadrature Receiver Frontend","authors":"B. Dehlink, H. Wohlmuth, K. Aufinger, F. Weiss, A. Scholtz","doi":"10.1109/CSICS.2006.319962","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319962","url":null,"abstract":"An in-phase/quadrature (I/Q) receiver frontend for communication and sensing (e.g. radar) applications in the frequency range between 75 and 86 GHz is presented. The frontend includes a low-noise amplifier (LNA), two down-conversion Gilbert mixers, a branchline coupler for the generation of the in-phase and quadrature LO signals, and LO buffers. The circuit was designed and fabricated in a 200 GHz fT SiGe:C bipolar technology. The chip performance was characterized by on-wafer measurements. From 75 GHz to 86 GHz, the frontend exhibits a single sideband noise figure of 11 dB, and a conversion gain that is higher than 28 dB. The input-referred compression point is -16 dBm. The chip occupies an area of 1000mum times 1100mum. The circuit works from a positive supply voltage of 5.5 V and draws 195 mA","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130165687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Ultra Linear 3.5GHz RF Front-End for OFDM System OFDM系统的超线性3.5GHz射频前端
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319886
P. Cortese, S. David, T. Le Toux, J. Mayock, I. Pilcher, J. Sanham
{"title":"Ultra Linear 3.5GHz RF Front-End for OFDM System","authors":"P. Cortese, S. David, T. Le Toux, J. Mayock, I. Pilcher, J. Sanham","doi":"10.1109/CSICS.2006.319886","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319886","url":null,"abstract":"This paper presents the design and performance of chips suitable for an RF front-end module, for WiMAX applications. The chips include a low cost single pole double throw (SPDT) switch and low noise amplifier as well as a 10-Watt 3.5GHz power amplifier MMIC implemented in a plastic air cavity QFN 8times6 mm2 package. Plastic packaging is used for the switch and the low noise amplifier. The broadband performance of these parts allow coverage from 3.3 GHz up to 3.8 GHz, over temperature range and process spread. The transmit path exhibits over 15dB of gain, thanks to very low insertion loss on the switch, manufactured on a high yield and reliable process. The error vector magnitude (EVM) is maintained below 2.5% up to 30dBm transmit power, for OFDM signal with PAR=10dB. On the receive path, the LNA provides 2 modes: a low noise operation with NF of 2.5dB and a bypass mode with 28dBm output PldB","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130446170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V 60nm集热器InGaAs/InP i型dhbt显示660 GHz fT, BVCEO = 2.5V, BVCBO = 2.7V
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319953
Z. Griffith, E. Lind, M. Rodwell, X. Fang, D. Loubychev, Ying Wu, J. Fastenau, A. Liu
{"title":"60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V","authors":"Z. Griffith, E. Lind, M. Rodwell, X. Fang, D. Loubychev, Ying Wu, J. Fastenau, A. Liu","doi":"10.1109/CSICS.2006.319953","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319953","url":null,"abstract":"We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a conventional mesa structure. The devices employ a 14 nm highly doped InGaAs base and a 60 nm InP collector containing an InGaAs/InAlAs superlattice grade. Devices employing a 400 nm emitter exhibit a maximum fT = 660 GHz with a 218 GHz f max - this is a record fT for a DHBT. The devices have been scaled vertically for reduced base and collector electron transit times, and the base-collector mesa has been further scaled to minimize the capacitance Ccb associated with the base contact area. The peak current gain beta ap 95, BVCEO = 2.5 V, BV CBO = 2.7 V, and the devices operate in excess of 30 mW/mum 2","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128931797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Generic, Scalable Model Applicable to MIM Capacitors of Arbitrary Electrical Length 一个通用的、可扩展的模型，适用于任意电长度的MIM电容器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319916
M. Asahara, C. Campbell, W. Frensley
{"title":"A Generic, Scalable Model Applicable to MIM Capacitors of Arbitrary Electrical Length","authors":"M. Asahara, C. Campbell, W. Frensley","doi":"10.1109/CSICS.2006.319916","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319916","url":null,"abstract":"Several metal-insulator-metal (MIM) thin film capacitor models suitable for MMIC design are available in commercial microwave circuit simulators and GaAs foundry process design kits. Although these models are in general accurate for series capacitors arbitrary electrical length, they are somewhat less useful for shunt capacitors over grounding substrate vias. Typically the bottom plate is not available as a ground connection node and in some cases exhibit non-physical anomalous resonance that does not occur in the actual capacitor. It is demonstrated that the coupled line (CL) capacitor model does not exhibit anomalous resonance, agrees with EM simulation for capacitors of significant electrical length, and features some advantages with regard to connection to the top and bottom plates of the capacitor","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123035252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Energy Efficient Wide Bandgap Devices 高能效宽带隙器件
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319904
J. Palmour
{"title":"Energy Efficient Wide Bandgap Devices","authors":"J. Palmour","doi":"10.1109/CSICS.2006.319904","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319904","url":null,"abstract":"As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF applications, GaN HEMTs allow the use of highly efficient class E circuit topologies demonstrating high powers of 63 Watts at 2 GHz with 75% power added efficiency. In broadband WiMax applications, GaN HEMTs offer very wide bandwidths while meeting the IEEE 802.16e standard with >25% drain efficiency. SiC Schottky diodes are allowing up to a 25% reduction in losses in power supplies for computers and servers when used in the power factor correction circuit. Even higher efficiencies can be obtained when the SiC Schottkys are combined with a SiC MOSFET as the switch, resulting in yet another 22% reduction in losses. For motor control, SiC Schottkys allow a >35% reduction in losses, as demonstrated for a 3 HP motor drive","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114844221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Challenges and Opportunities for Compound Semiconductors in the Mobile Handset 手机中化合物半导体的挑战与机遇
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319907
A. Anwar, C. Taylor
{"title":"Challenges and Opportunities for Compound Semiconductors in the Mobile Handset","authors":"A. Anwar, C. Taylor","doi":"10.1109/CSICS.2006.319907","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319907","url":null,"abstract":"Strategy Analytics believes that compound semiconductor penetration of wireless markets will continue to be driven by GaAs technology. Overall market growth for GaAs devices will continue to be derived from wireless markets, with cellular handsets being the primary driver over the next five years. In the handset, the emphasis for GaAs will remain on the switch and PA functions centred on GaAs HBT and pHEMT technologies. Silicon technologies will continue to dominate the cellular handset in functions outside of the cellular front-end, but the added complexity of multi-mode and multi-band handsets will increase GaAs device penetration in handset front ends at the expense of Si LDMOS and lead to a significant increase in the overall GaAs real estate in cellular handset front-end modules. Coupled with increasing GaAs demand from other markets, the total market will exceed $3 billion by the end of 2006, growing at a CAAGR of 7 percent through to 2010","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116090296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel 43Gb/s 0.2μm PHEMT 1:4 Demultiplexer 一种新型43Gb/s 0.2μm PHEMT 1:4解复用器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319955
Jingfeng Ding, Zhigong Wang, En Zhu
{"title":"A Novel 43Gb/s 0.2μm PHEMT 1:4 Demultiplexer","authors":"Jingfeng Ding, Zhigong Wang, En Zhu","doi":"10.1109/CSICS.2006.319955","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319955","url":null,"abstract":"A novel 43Gb/s 1:4 demultiplexer (DEMUX) applied in SONET OC-768 was realized in OMMIC's 0.2μm GaAs PHEMT. This DEMUX is featured for achieving one stage demultiplexing by using a long transmission line. This method not only reduces the components of the DEMUX but also lowers its power dissipation. The fabricated DEMUX operates error free at 43Gb/s with 231-1 pseudorandom bit sequences (PRBS) via on-wafer testing. The chip size is 1.9times1.9mm2 and the power dissipation is 2.0W with a single -5.0V supply","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123867825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 77 GHz Transceiver for Automotive Radar System Using a 120nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs 采用120nm In0.4AlAs/In0.35GaAs变质HEMTs的77 GHz汽车雷达收发器
2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI: 10.1109/CSICS.2006.319963
Kyoungwoon Kim, W. Choi, Sungwon Kim, Gyungseon Seol, Kwangseok Seo, Y. Kwon
{"title":"A 77 GHz Transceiver for Automotive Radar System Using a 120nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs","authors":"Kyoungwoon Kim, W. Choi, Sungwon Kim, Gyungseon Seol, Kwangseok Seo, Y. Kwon","doi":"10.1109/CSICS.2006.319963","DOIUrl":"https://doi.org/10.1109/CSICS.2006.319963","url":null,"abstract":"In this work, the authors demonstrate a compact 77GHz single-chip transceiver for an automotive radar system. The transceiver consists of a low noise amplifier, mixer, doubler and power amplifier. The MMIC chip set is fabricated using a 120nm-gate-length In0.4AlAs/In0.35GaAs mHEMT. The low noise amplifier demonstrated a small signal gain of 19dB at 77GHz. The resistive mixer achieved a -11dB conversion gain. The doubler achieved 0.4dBm output power, a -5.6dB conversion gain and a difference of 18.4dBc between the 77GHz output and the fundamental output. The power amplifier demonstrated a small signal gain of 21.4dB at 77GHz with 12.3dBm output power. The single-chip transceiver demonstrated 9.3dBm output power at the transmitter and a 5dB conversion gain at the receiver","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125329759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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