Ultra Linear 3.5GHz RF Front-End for OFDM System

P. Cortese, S. David, T. Le Toux, J. Mayock, I. Pilcher, J. Sanham
{"title":"Ultra Linear 3.5GHz RF Front-End for OFDM System","authors":"P. Cortese, S. David, T. Le Toux, J. Mayock, I. Pilcher, J. Sanham","doi":"10.1109/CSICS.2006.319886","DOIUrl":null,"url":null,"abstract":"This paper presents the design and performance of chips suitable for an RF front-end module, for WiMAX applications. The chips include a low cost single pole double throw (SPDT) switch and low noise amplifier as well as a 10-Watt 3.5GHz power amplifier MMIC implemented in a plastic air cavity QFN 8times6 mm2 package. Plastic packaging is used for the switch and the low noise amplifier. The broadband performance of these parts allow coverage from 3.3 GHz up to 3.8 GHz, over temperature range and process spread. The transmit path exhibits over 15dB of gain, thanks to very low insertion loss on the switch, manufactured on a high yield and reliable process. The error vector magnitude (EVM) is maintained below 2.5% up to 30dBm transmit power, for OFDM signal with PAR=10dB. On the receive path, the LNA provides 2 modes: a low noise operation with NF of 2.5dB and a bypass mode with 28dBm output PldB","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2006.319886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents the design and performance of chips suitable for an RF front-end module, for WiMAX applications. The chips include a low cost single pole double throw (SPDT) switch and low noise amplifier as well as a 10-Watt 3.5GHz power amplifier MMIC implemented in a plastic air cavity QFN 8times6 mm2 package. Plastic packaging is used for the switch and the low noise amplifier. The broadband performance of these parts allow coverage from 3.3 GHz up to 3.8 GHz, over temperature range and process spread. The transmit path exhibits over 15dB of gain, thanks to very low insertion loss on the switch, manufactured on a high yield and reliable process. The error vector magnitude (EVM) is maintained below 2.5% up to 30dBm transmit power, for OFDM signal with PAR=10dB. On the receive path, the LNA provides 2 modes: a low noise operation with NF of 2.5dB and a bypass mode with 28dBm output PldB
OFDM系统的超线性3.5GHz射频前端
本文介绍了适用于WiMAX应用的射频前端模块芯片的设计和性能。该芯片包括一个低成本的单极双掷(SPDT)开关和低噪声放大器,以及一个10瓦3.5GHz功率放大器MMIC,实现在一个塑料气腔QFN 8times6 mm2封装中。开关和低噪声放大器采用塑料包装。这些部件的宽带性能允许覆盖范围从3.3 GHz到3.8 GHz,超过温度范围和工艺扩展。由于开关上的插入损耗非常低,在高产量和可靠的工艺上制造,发射路径显示超过15dB的增益。对于PAR=10dB的OFDM信号,在30dBm发射功率下,误差矢量幅度(EVM)保持在2.5%以下。在接收路径上,LNA提供2种模式:NF为2.5dB的低噪声工作模式和输出PldB为28dBm的旁路模式
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书