X-band AlGaN/GaN HEMT with over 80W Output Power

2006 IEEE Compound Semiconductor Integrated Circuit Symposium Pub Date : 2006-11-01 DOI:10.1109/CSICS.2006.319950

K. Takagi, K. Masuda, Y. Kashiwabara, H. Sakurai, K. Matsushita, S. Takatsuka, H. Kawasaki, Y. Takada, K. Tsuda

引用次数: 26

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under VDS=30V, CW operating condition at 9.5GHz, and a gain compression level of 3dB

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x波段AlGaN/GaN HEMT输出功率超过80W

为x波段应用开发了AlGaN/GaN高电子迁移率晶体管(hemt)。研究了连续工作条件下输出功率特性与工作电压和温度的关系。在VDS=30V、9.5GHz连续波工作条件下，采用11.52 mm栅极外围双芯片组合的AlGaN/GaN HEMT输出功率超过81.3W，功率附加效率(PAE)为34%，增益压缩水平为3dB

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

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