B. Randall, S. Currie, K. Fritz, G.D. Rash, J. L. Fasig, B. Gilbert, E. Daniel
{"title":"A 70 Gbps 16:1 Multiplexer and a 60 Gbps 1:16 Demultiplexer in a SiGe BiCMOS Technology","authors":"B. Randall, S. Currie, K. Fritz, G.D. Rash, J. L. Fasig, B. Gilbert, E. Daniel","doi":"10.1109/CSICS.2006.319936","DOIUrl":null,"url":null,"abstract":"The authors present circuits for at-rate processing of high speed serial data for optical communication applications, implemented in the IBM 8HP SiGe BiCMOS technology. Specifically, the authors describe a 16:1 multiplexer and a 1:16 demultiplexer, each assembled into a package designed to support 80 Gbps data rates. The maximum speed of the packaged components (multiplexer: 70 Gbps, demultiplexer: 60 Gbps) is among the highest reported to date for this generation SiGe technology, particularly for circuits with this level of complexity (>10,000 transistors)","PeriodicalId":338151,"journal":{"name":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Compound Semiconductor Integrated Circuit Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2006.319936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The authors present circuits for at-rate processing of high speed serial data for optical communication applications, implemented in the IBM 8HP SiGe BiCMOS technology. Specifically, the authors describe a 16:1 multiplexer and a 1:16 demultiplexer, each assembled into a package designed to support 80 Gbps data rates. The maximum speed of the packaged components (multiplexer: 70 Gbps, demultiplexer: 60 Gbps) is among the highest reported to date for this generation SiGe technology, particularly for circuits with this level of complexity (>10,000 transistors)