{"title":"Dual-mode Planar Resonator Based Balun BPF for Bluetooth Applications","authors":"Nidhi Pandit, R. Jaiswal, Nagendra Prasad Pathak","doi":"10.1109/IMaRC45935.2019.9118745","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118745","url":null,"abstract":"In this paper, a multifunctional balun band-pass filter (BPF) circuit for Bluetooth application is reported. Two multimode resonators and open-circuited transmission line have been utilized to obtain balun BPF response. Theoretical and full-wave EM simulations are discussed in detail along with the even-odd mode analysis. Even and odd mode frequencies as well as transmission zero frequency can be flexibly controlled through structural parameters. Based on the principle of open-circuited transmission line and dual-mode resonators, a compact Balun BPF circuit has been designed and validated through measured results. The designed balun BPF has insertion and reflection loss better than 3 dB and 40 dB respectively in the operating band. Measured isolation of 10 dB is obtained in between both the unbalanced output ports. The two output ports have an amplitude imbalance of 0 dB and a phase imbalance of 180 degrees at the design frequency of 2.4 GHz.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"28 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133390610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ashish Jindal, Umakant Goyal, K. Rawat, A. Basu, M. Mishra, S. Koul
{"title":"1.5-2.5 GHz Measurement Based Power Amplifier Using SSPL GaN HEMT Device","authors":"Ashish Jindal, Umakant Goyal, K. Rawat, A. Basu, M. Mishra, S. Koul","doi":"10.1109/IMaRC45935.2019.9118682","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118682","url":null,"abstract":"In this paper, a two stages broadband power amplifier with improved interstage matching has been designed and developed using SSPL GaN HEMT Device. In this work, the power amplifier has been designed using measured data. Technique to measure packaged power devices using indigenously developed bias tee incorporating stability network along with DC bias network has been discussed. Also, improved interstage matching network to improve bandwidth of power amplifier. Designed power amplifier is providing optimized performance in 1GHz bandwidth with 24dB small signal gain and 4W CW output power with 40% PAE.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133494026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Highly-efficient Compact Size DGS-based Wireless Power Transfer for Low-Power Sensor Nodes","authors":"Kassen Dautov, M. Hashmi, S. Verma, Rahul Gupta","doi":"10.1109/IMaRC45935.2019.9118659","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118659","url":null,"abstract":"This paper presents the design of a highly-efficient plus-shaped defected ground structure (DGS) based wireless power transfer (WPT) system that is applicable for low-power electronic devices. The prototype, developed on RO4350B op-erates at 0.4 GHz and occupies a board area of 30×30 mm2. The proposed WPT system advances the existing state-of-the-art by exhibiting significantly superior figures of merit (FoM). In particular, it possesses a constant efficiency of 86% between 20 mm and 35 mm around the industrial, scientific and medical (ISM) frequency of 0.4 GHz.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125755759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shashank Soi, S. Singh, Rajendra Singh, Ashok Kumar
{"title":"Link Analysis of Ku Band Troposcatter Communication","authors":"Shashank Soi, S. Singh, Rajendra Singh, Ashok Kumar","doi":"10.1109/IMaRC45935.2019.9118656","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118656","url":null,"abstract":"Rapid growth in the capabilities of Satellite Communication resulted in even greater growth in the information needs. However, resources available for Satellite Communication commercially were quite expensive. To combine ease of use with high performance communication links, Troposcatter communication system for over-the-horizon communication became significant. Initially Troposcatter communication was confined to lower frequency bands such as the S and C bands, but the Tropo links at these frequencies used large antenna terminals and suffered from frequency scarcity. Shift to high frequencies, like Ku band Troposcatter at 15 GHz eliminates the bandwidth constraints of the lower frequency bands with reduced equipment sizes but at the same time possess challenges such as higher signal attenuation due to rain droplets and path loss due to higher order frequencies. In this paper the path loss and maximum possible data rates of Troposcatter communication at Ku band with respect to the current possible technical resources has been estimated. The significance of rain scattering for various link availabilities has been considered.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125952425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Tripathy, Ashish Kumar Singh, A. Samad, S. Chander, P. Singh, K. Baral, Deepak Kumar Jarwal, Ashwini Kumar Mishra, S. Jit
{"title":"Performance Investigation of a p-Channel Hetero-Junction GaN Tunnel FET","authors":"M. Tripathy, Ashish Kumar Singh, A. Samad, S. Chander, P. Singh, K. Baral, Deepak Kumar Jarwal, Ashwini Kumar Mishra, S. Jit","doi":"10.1109/IMaRC45935.2019.9118671","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118671","url":null,"abstract":"In this work a vertical p-channel heterojunction GaN tunnel field effect transistor (TFET) has been reported. A thin layer of InGaN is filled in between source and channel to enhance the performance of the device. The mechanism of current conduction in the proposed device is based on the physics related to polarization charge induced in III-nitrides compound semiconductor such as GaN, InN, AlN etc. The effect of polarization increases the electric field at the source-channel interface, which opens the door for unidirectional tunneling depending on the voltage applied across gate to source terminal. The other significance of this polarization concept is to reduce the tunneling width in comparison to conventional TFET as well as to minimize ambipolar current. The performance in terms of ION/IOFF and SS are also investigated for the proposed device.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126039326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Improved Design of A Bias Tee Using A Modified Radial Stub","authors":"Nirupama Jana, M. Mandal, Ravi Shaw","doi":"10.1109/IMaRC45935.2019.9118616","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118616","url":null,"abstract":"This paper presents a microstrip line high performance bias tee for microwave active circuits. A conventional radial stub is first modified by connecting two shunt open-stubs to design a bandstop filter (BSF) with wide rejection band. Then, it is used in the DC line for isolation improvement. Two modified bias tees, one with single BSF unit and another with two BSF units are fabricated for X-band applications. Measurement results show that the second unit provides at least 37.4 dB isolation over 7.9-13 GHz. Design guidelines are provided for other frequency range.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"59 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123392163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sanket Chaudhary, N. Carvalho, Arnaldo S. R. Oliveira
{"title":"Design and Analysis of Class B Power Amplifier to be Used in All Digital Transmitters","authors":"Sanket Chaudhary, N. Carvalho, Arnaldo S. R. Oliveira","doi":"10.1109/IMaRC45935.2019.9118687","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118687","url":null,"abstract":"This paper presents a design and analysis of the class B power amplifier for all digital applications. The enlightened power amplifier is designed at 868 MHz for an application such as Low-Power Wide Area Network (LPWAN). Analysis of the power amplifier for the digital RF pulsed power in comparison of simple RF power has been addressed in term of Power Aided Efficiency (PAE) and gain. Characterized power amplifier offers a return loss of ˜26dB, a large signal gain of ˜18.5dB, a PAE of ˜ 47%, and Error Vector Magnitude (EVM) for (Long-Term Evolution) LTE modulated signal with ˜2.5%.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127994741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"RF Imaging of Dielectric Samples Using Complementary Split Ring Resonator Array","authors":"Greeshmaja Govind, M. Akhtar","doi":"10.1109/IMaRC45935.2019.9118691","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118691","url":null,"abstract":"A microwave subsurface imaging scheme using a planar sensor based on an array of complementary split ring resonator (CSRR) is proposed. Conventionally, sensors based on single CSRR element are used for near field microwave imaging in which the sensor is made to scan the target region. However, while imaging larger test regions, sensor with multiple CSRR elements is extremely advantageous as it reduces the scanning time drastically by a factor that depends on the number of resonating units present in the array. The proposed sensor comprises of a 3×3 array of CSRR sensing elements, resonating at three different frequencies. The CSRR structures have a meandered configuration, possessing improved sensing capabilities compared to a conventional rectangular resonating unit of same dimensions. When the object to be imaged is placed on top of the CSRR structures, the sensor responds with a change in the transmission minimum frequency, with the shift proportional to the dielectric properties of the target region. The practical utility of the proposed scheme is established with the help of retrieved images of a checkerboard-like test sample.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124494528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Shireesha, K. Y. Varma, G. Ujwala, Ch.S.M. Jyothi, P. Mohan, N’Gongo Simplice Rufin
{"title":"Broadband 2W Transmit/Receive Module using Indigenous GaAs & GaN MMICs","authors":"C. Shireesha, K. Y. Varma, G. Ujwala, Ch.S.M. Jyothi, P. Mohan, N’Gongo Simplice Rufin","doi":"10.1109/IMaRC45935.2019.9118775","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118775","url":null,"abstract":"This paper presents the design, fabrication and test results of a highly integrated wideband 2W 6-18GHz T/R module built using the MMICs designed in house. Both GaAs & GaN technologies were employed for the designs; all the low power amplifiers & control circuits are realized on GaAs substrate whereas 1W, 2W amplifiers & high power T/R switch are based on the robust GaN process. Measured results indicate that the T/R module has good VSWR with low RMS amplitude & phase errors over the entire frequency range. Tentative Size of the T/R module developed is 78mm x 19mm x 6 mm (L x W x H).","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121309063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. G. Ovejero, M. Faenzi, A. Mahmoud, M. Ettorre, R. Sauleau, N. Chahat, G. Chattopadhyay, S. Maci
{"title":"Some recent developments on modulated metasurface antennas","authors":"D. G. Ovejero, M. Faenzi, A. Mahmoud, M. Ettorre, R. Sauleau, N. Chahat, G. Chattopadhyay, S. Maci","doi":"10.1109/IMaRC45935.2019.9118736","DOIUrl":"https://doi.org/10.1109/IMaRC45935.2019.9118736","url":null,"abstract":"This paper presents two different research lines that have contributed to extend the range of applicability of modulated metasurface (MTS) antennas. First, we describe the realization of modulated MTS antennas by metallic cylinders with elliptical cross-section. This metal-only structure can withstand harsh environmental conditions, for instance, in deep-space exploration. Second we introduce two possible techniques to overcome the bandwidth limitation of modulated MTS antennas. The first method allows one to get dual-band operation, whereas the second one enables the design of MTS antenna with a larger bandwidth.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115186666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}