C. Shireesha, K. Y. Varma, G. Ujwala, Ch.S.M. Jyothi, P. Mohan, N’Gongo Simplice Rufin
{"title":"使用本土GaAs和GaN mmic的宽带2W发射/接收模块","authors":"C. Shireesha, K. Y. Varma, G. Ujwala, Ch.S.M. Jyothi, P. Mohan, N’Gongo Simplice Rufin","doi":"10.1109/IMaRC45935.2019.9118775","DOIUrl":null,"url":null,"abstract":"This paper presents the design, fabrication and test results of a highly integrated wideband 2W 6-18GHz T/R module built using the MMICs designed in house. Both GaAs & GaN technologies were employed for the designs; all the low power amplifiers & control circuits are realized on GaAs substrate whereas 1W, 2W amplifiers & high power T/R switch are based on the robust GaN process. Measured results indicate that the T/R module has good VSWR with low RMS amplitude & phase errors over the entire frequency range. Tentative Size of the T/R module developed is 78mm x 19mm x 6 mm (L x W x H).","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Broadband 2W Transmit/Receive Module using Indigenous GaAs & GaN MMICs\",\"authors\":\"C. Shireesha, K. Y. Varma, G. Ujwala, Ch.S.M. Jyothi, P. Mohan, N’Gongo Simplice Rufin\",\"doi\":\"10.1109/IMaRC45935.2019.9118775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design, fabrication and test results of a highly integrated wideband 2W 6-18GHz T/R module built using the MMICs designed in house. Both GaAs & GaN technologies were employed for the designs; all the low power amplifiers & control circuits are realized on GaAs substrate whereas 1W, 2W amplifiers & high power T/R switch are based on the robust GaN process. Measured results indicate that the T/R module has good VSWR with low RMS amplitude & phase errors over the entire frequency range. Tentative Size of the T/R module developed is 78mm x 19mm x 6 mm (L x W x H).\",\"PeriodicalId\":338001,\"journal\":{\"name\":\"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":\"265 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMaRC45935.2019.9118775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC45935.2019.9118775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband 2W Transmit/Receive Module using Indigenous GaAs & GaN MMICs
This paper presents the design, fabrication and test results of a highly integrated wideband 2W 6-18GHz T/R module built using the MMICs designed in house. Both GaAs & GaN technologies were employed for the designs; all the low power amplifiers & control circuits are realized on GaAs substrate whereas 1W, 2W amplifiers & high power T/R switch are based on the robust GaN process. Measured results indicate that the T/R module has good VSWR with low RMS amplitude & phase errors over the entire frequency range. Tentative Size of the T/R module developed is 78mm x 19mm x 6 mm (L x W x H).
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