Performance Investigation of a p-Channel Hetero-Junction GaN Tunnel FET

In this work a vertical p-channel heterojunction GaN tunnel field effect transistor (TFET) has been reported. A thin layer of InGaN is filled in between source and channel to enhance the performance of the device. The mechanism of current conduction in the proposed device is based on the physics related to polarization charge induced in III-nitrides compound semiconductor such as GaN, InN, AlN etc. The effect of polarization increases the electric field at the source-channel interface, which opens the door for unidirectional tunneling depending on the voltage applied across gate to source terminal. The other significance of this polarization concept is to reduce the tunneling width in comparison to conventional TFET as well as to minimize ambipolar current. The performance in terms of ION/IOFF and SS are also investigated for the proposed device.