基于SSPL GaN HEMT器件的1.5-2.5 GHz测量功率放大器

2019 IEEE MTT-S International Microwave and RF Conference (IMARC) Pub Date : 2019-12-01 DOI:10.1109/IMaRC45935.2019.9118682

Ashish Jindal, Umakant Goyal, K. Rawat, A. Basu, M. Mishra, S. Koul

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引用次数: 1

摘要

本文利用SSPL GaN HEMT器件设计并研制了一种改进级间匹配的两级宽带功率放大器。在这项工作中，利用测量数据设计了功率放大器。讨论了采用自主开发的带稳定网络和直流偏压网络的偏压三通对封装电力器件进行测量的技术。改进了级间匹配网络，提高了功率放大器的带宽。设计的功率放大器在1GHz带宽下提供最佳性能，小信号增益为24dB，连续输出功率为4W, PAE为40%。

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1.5-2.5 GHz Measurement Based Power Amplifier Using SSPL GaN HEMT Device

In this paper, a two stages broadband power amplifier with improved interstage matching has been designed and developed using SSPL GaN HEMT Device. In this work, the power amplifier has been designed using measured data. Technique to measure packaged power devices using indigenously developed bias tee incorporating stability network along with DC bias network has been discussed. Also, improved interstage matching network to improve bandwidth of power amplifier. Designed power amplifier is providing optimized performance in 1GHz bandwidth with 24dB small signal gain and 4W CW output power with 40% PAE.

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来源期刊

2019 IEEE MTT-S International Microwave and RF Conference (IMARC)

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