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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)最新文献

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Multicore multimode fibers with high spatial density 具有高空间密度的多芯多模光纤
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548790
K. Saitoh
{"title":"Multicore multimode fibers with high spatial density","authors":"K. Saitoh","doi":"10.1109/PHOSST.2016.7548790","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548790","url":null,"abstract":"Multicore multimode fiber is a promising candidate for achieving high spatial density SDM systems, since it can increase the spatial channel count in a fiber using the multiplicity of the core and mode. In this presentation, recent progress of multicore multimode fibers is reviewed.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134507045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On visible light communication and quality of light emitted from illumination LEDs 照明led可见光通信及发光质量研究
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548765
W. Popoola, E. Pikasis
{"title":"On visible light communication and quality of light emitted from illumination LEDs","authors":"W. Popoola, E. Pikasis","doi":"10.1109/PHOSST.2016.7548765","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548765","url":null,"abstract":"We present the effect of LiFi, with on-off keying modulation technique, on the quality of light emitted from LEDs. Findings show that to preserve the LED light quality, the LiFi data signal should be such that the LED average drive current remains unchanged.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134542139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Demonstration of a silicon photonic neural network 一个硅光子神经网络的演示
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548726
A. Tait, E. Zhou, A. Wu, M. Nahmias, T. F. de Lima, B. Shastri, P. Prucnal
{"title":"Demonstration of a silicon photonic neural network","authors":"A. Tait, E. Zhou, A. Wu, M. Nahmias, T. F. de Lima, B. Shastri, P. Prucnal","doi":"10.1109/PHOSST.2016.7548726","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548726","url":null,"abstract":"Silicon photonic integration could enable high-performance brain-inspired photonic processors. We demonstrate a 3 node recurrent photonic neural network. Cusp and Hopf bifurcations induced by synaptic reconfiguration are shown as proof-of-concept. The prototype represents an early step towards network-based models of physical computing with integrated photonics.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133370585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Integrated microwave photonics: The quest for the universal programmable processor 集成微波光子学:对通用可编程处理器的探索
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548751
Daniel Pérez, I. Gasulla, J. Capmany, R. Soref
{"title":"Integrated microwave photonics: The quest for the universal programmable processor","authors":"Daniel Pérez, I. Gasulla, J. Capmany, R. Soref","doi":"10.1109/PHOSST.2016.7548751","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548751","url":null,"abstract":"We introduce the concept of universal microwave photonic processor as opposed to the current application specific paradigm. We then explore the use of the hexagonal and square mesh topologies for the implementation of versatile and programmable optical cores for MWP processors.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114633538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Selective area growth of high-density GaN nanowire arrays on Si(111) 高密度氮化镓纳米线阵列在Si(111)上的选择性面积生长
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548763
C. H. Wu, P. Y. Lee, K. Y. Chen, K. Cheng
{"title":"Selective area growth of high-density GaN nanowire arrays on Si(111)","authors":"C. H. Wu, P. Y. Lee, K. Y. Chen, K. Cheng","doi":"10.1109/PHOSST.2016.7548763","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548763","url":null,"abstract":"Selective-area growth of high-density GaN nanowires on Si(111) substrate by plasma-assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross-section show the best optical quality with a strong resonant emission at 3.457eV.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115261389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optically-assisted time-interleaving digital-to-analogue converters 光辅助时间交错数模转换器
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548805
M. Khafaji, M. Jazayerifar, K. Jamshidi, F. Ellinger
{"title":"Optically-assisted time-interleaving digital-to-analogue converters","authors":"M. Khafaji, M. Jazayerifar, K. Jamshidi, F. Ellinger","doi":"10.1109/PHOSST.2016.7548805","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548805","url":null,"abstract":"This paper presents a novel time-interleaving digital-to-analogue converter architecture. Optical pulses sample the analog output of electrical converters and then combine them using an optical multiplexer. Since sampling and time alignment are superior in optical domain, doubling the current state-of-the-art performance is expected.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123523989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of GeSn and GeSnSi by sputtering epitaxy 溅射外延法制备GeSn和ginssi
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548541
B. Cheng, Jun Zheng, C. Xue, Zhi Liu
{"title":"Synthesis of GeSn and GeSnSi by sputtering epitaxy","authors":"B. Cheng, Jun Zheng, C. Xue, Zhi Liu","doi":"10.1109/PHOSST.2016.7548541","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548541","url":null,"abstract":"GeSn alloy has recently received significant attention due to the fact that their direct-bandgap behavior can be predicted when the Sn content is larger than about 0.1. Moreover, the bandgap of these alloys can be adjusted in the infrared range. This has the potential to extend Si-based materials to infrared application. However, the epitaxial growth of GeSn on Si substrates has several challenges. Firstly, the equilibrium solid solubility of Sn in Ge is just 0.5%, thus hampering the formation of high-Sn alloys. Secondly, there is a large lattice mismatch between SnGe and Si. Thirdly, Sn has comparatively lower surface energy than that of Ge, which causes Sn tend to segregate to surface during growth. Despite these difficulties, significant efforts have been made in growing GeSn alloys by molecular beam epitaxy (MBE) and ultrahigh vacuum chemical vapor deposition (UHV/CVD). In addition to progress in GeSn growth by MBE and CVD, there have further investigations into the use of alternative methods such as sputtering, solid phase epitaxy and metal-induced crystallization. Among these, sputtering appears to offer greater potential for the cost-effective mass manufacturing of GeSn and GeSnSi alloys.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125413065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Solving optimization problems with coupled dynamical elements 求解耦合动力单元的优化问题
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548727
F. Vallini, Shiva Shahin, F. Monifi, J. Smalley, M. Rabinovich, Y. Fainman
{"title":"Solving optimization problems with coupled dynamical elements","authors":"F. Vallini, Shiva Shahin, F. Monifi, J. Smalley, M. Rabinovich, Y. Fainman","doi":"10.1109/PHOSST.2016.7548727","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548727","url":null,"abstract":"We propose a new approach to solve optimization problems using Generalized Lotka-Volterra with global inhibition. Stability criteria ensure the convergences of valid solutions are obtained and the solution is given by the switching time of the network elements. A network of coupled lasers is proposed.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126186996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum heterostructures based on GaAs nanomembranes for photonic applications 光子应用中基于砷化镓纳米膜的量子异质结构
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548759
G. Tutuncuoglu, M. Friedl, M. de la Mata, D. Deianae, Jean-Baptiste Leran, H. Potts, F. Matteini, J. Arbiol, A. Fontcuberta i Morral
{"title":"Quantum heterostructures based on GaAs nanomembranes for photonic applications","authors":"G. Tutuncuoglu, M. Friedl, M. de la Mata, D. Deianae, Jean-Baptiste Leran, H. Potts, F. Matteini, J. Arbiol, A. Fontcuberta i Morral","doi":"10.1109/PHOSST.2016.7548759","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548759","url":null,"abstract":"III-V nanostructures are promising building blocks for future optoelectronics applications. In order to exploit the unique properties of the III-V nanostructures such as high carrier mobility, high spin-orbit interaction and optimum band-gap for various applications one needs to be able to grow nanostructures with high crystallinity and desired dimensions and configurations.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126329248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis, properties, and applications of SiGeSn alloys: State of the art and future prospects SiGeSn合金的合成、性能及应用:现状与展望
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI: 10.1109/PHOSST.2016.7548745
J. Menéndez
{"title":"Synthesis, properties, and applications of SiGeSn alloys: State of the art and future prospects","authors":"J. Menéndez","doi":"10.1109/PHOSST.2016.7548745","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548745","url":null,"abstract":"In 1991, Soref and Perry presented a concept paper on the properties of a hypothetical ternary Ge1-x-ySixSny alloy for silicon-compatible optoelectronic applications. The material was finally synthesized at Arizona State University in 2003, opening up a new field of research that is rapidly approaching its first one-thousand publications. A very recent review article by Wirths, Buca, and Mantl provides a detailed account of this progress.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128001575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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