2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)最新文献

{"title":"MT type connector for 2×6 multicore fibers","authors":"Kengo Watanabe, Tsunetoshi Saito, Kohei Kawasaki, M. Iwaya, Takayuki Ando, K. Suematsu, R. Sugizaki","doi":"10.1109/PHOSST.2016.7548813","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548813","url":null,"abstract":"MT type connector for 12 multicore fibers arranged in 2×6 array is developed. Rotational alignment precision within ± 0.9 degree is realized by employing alignment member with two fiber holes. Low connection loss less than 0.8 dB is also realized in all 84 cores.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128941252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optics-inspired context-aware image compression using warped stretch transform","authors":"Jacky Chan, A. Mahjoubfar, B. Jalali","doi":"10.1109/PHOSST.2016.7548804","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548804","url":null,"abstract":"Image compression by the warped stretch transform is introduced, where the input image is reshaped by a signal-dependent mapping i.e. designed “warp kernel”. The warped image can be downsampled at a lower uniform rate for the same PSNR, effectively achieving reversible and context-aware non-uniform sampling.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133595259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III-Nitride nanowires lasers","authors":"George T. Wang, Changyi Li, Sheng Liu, Jeremy B. Wright, B. Leung, D. Koleske, J. Figiel, T. Luk, I. Brener, G. Balakrishnan, S. Brueck","doi":"10.1109/PHOSST.2016.7548546","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548546","url":null,"abstract":"Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115230934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient spectral and correlative processing with spatial-spectral holography","authors":"Z. Barber, C. Harrington, R. Mohan, C. Stiffler, T. Jackson, P. Sellin, K. Merkel","doi":"10.1109/PHOSST.2016.7548778","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548778","url":null,"abstract":"Spatial-spectral holographic (SSH) materials function as a coherent frequency domain resource for high-performance spectral and correlative processing. Real-time matched filtering of 25 GHz bandwidth signals is demonstrated including simple text searches. Despite cryogenic cooling, SSH processing can be efficient for large scale processing systems.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116044414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Proposal of MIMO-free mode divison multiplexed transmission using true eigenmodes","authors":"Y. Kokubun, Tatsuhiko Watanabe, S. Miura, Ryo Kawata","doi":"10.1109/PHOSST.2016.7548816","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548816","url":null,"abstract":"The evolution of electromagnetic field profile of LP modes along with the propagation is accurately analyzed and the transform matrix between LP modes and true eigenmodes is derived. Using this matrix, a novel method to configure true eigenmode multi/demultiplexer is proposed to realize MIMO-free transmission.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123432596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Emerging III-Nitride technology for ultraviolet and visible integrated photonics","authors":"M. Soltani","doi":"10.1109/PHOSST.2016.7548792","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548792","url":null,"abstract":"We review our effort on developing a universal integrated photonic platform functional from ultraviolet (UV) through the visible range. In this context, III-Nitride materials, with their wide bandgap and unique UV-visible optical and electronic properties have reached a level of maturity for on-chip electronic-photonic integration.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129065948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical properties of GaAsSb nanowire networks and GaAs nanomembranes","authors":"Z. Yang, A. Surrente, K. Gal̷kowski, G. Tutuncuoglu, H. Potts, M. Friedl, Jean-Baptiste Leran, A. Fontcuberta i Morral, F. Cristiano, D. Maude, S. Plissard, P. Płochocka","doi":"10.1109/PHOSST.2016.7548758","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548758","url":null,"abstract":"Nanostructures, including nanowires, nanotrees, and membranes have potential applications in electronics, optoelectronics or solar cell applications. For example, the growth of branched nanowires (NWs) recently gained interest due to new developments in quantum optics and mesoscopic physics. Recent studies reported the growth of InAs and InSb NW networks that are the most promising material candidate for Majorana's braiding. Optimization and control of different geometrical configurations of the nanostructures requires detail understanding of their electronic and optical properties. Here, we present the result of a detailed investigation of optical properties and carrier dynamics of GaAsSb nanowire networks and GaAs nanomembranes.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132042314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III-V integration on Si for photonics","authors":"J. Reithmaier, M. Benyoucef","doi":"10.1109/PHOSST.2016.7548793","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548793","url":null,"abstract":"A new approach based on III-V-Si nanocomposite is under development, which may overcome most of those problems. This paper reviews some of the major initial results gained within the last few years towards a full optoelectronic silicon based integration platform. This approach is based on the growth of III-V quantum dots (QDs) directly grown on either planar silicon or on patterned surfaces. Based on a GaAs/InAs core-shell geometry high quality optical emission could be obtained. By overgrowing InAs QDs with silicon a defect free single crystal planar silicon layer can be formed with embedded InAs nano clusters. Transmission electron microscope investigations show that the nanoclusters fully relax by closed loop interface dislocations but without initiating threading dislocations in the silicon matrix.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130287534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly tensile-strained Ge quantum dots on GaSb by MBE for light sources on Si","authors":"Zhenpu Zhang, Yuxin Song, Qimiao Chen, Q. Gong, Shumin Wang","doi":"10.1109/PHOSST.2016.7548739","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548739","url":null,"abstract":"It is theoretically predicted that biaxial tensile strain as much as 1.4% can make up the 136 meV gap between the Γ and L valley in Ge [1], thereby converting Ge from an indirect-bandgap semiconductor into a direct-bandgap one that can emit light efficiently covering the telecom band. The mobility of both carriers is dramatically increased simultaneously. Therefore, tensile-strained Ge has drawn large interest in the potential for high speed transistors and light sources for Si photonics. We have proposed and demonstrated that tensile-strained Ge quantum dot (QD) on InP is a better solution for the realization of light sources on Si than thin films since it can hold large strain to convert the bandgap and insensitive to structural defects at the same time [2]. In this work, the molecular beam epitaxy (MBE) of tensile-strained Ge QDs on GaSb(001) with thickness ranging from sub-monolayer (ML) to a few MLs is studied. The formation and evolution of the deposited Ge QDs are investigated by the reflection high-energy electron diffraction (RHEED), and the surface morphology is measured by atomic force microscopy (AFM). In FIG. 1, it is shown that the RHEED pattern changed to a dotty one after 1.7 ML of the Ge deposition indicating a Stranski-Krastanov (SK) growth mode with the existence of a wetting layer. FIG. 2 are AFM images of the samples with different Ge thickness. It can be found that when the thickness is below one ML, the Ge atoms nucleate randomly on the GaSb atomic steps, forming sub-ML islands. The two dimensional growth continues to a full coverage of the GaSb surface and up to 1.7 ML. A few QDs can be found before 1 ML, probably due to surface defects. These sub-ML islands and the one ML thick Ge films are fully strained (7.2% tensile strain). When the thickness is larger than 1.7 ML, clear formation of QDs is observed. The QDs are mostly rectangular shape with the edges along the (110) directions. The evolution observed from RHEED and AFM is consistent. Later, samples of the Ge with different thicknesses capped by GaSb were also grown. Further analysis including optical properties are under implement.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126363417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Physical modeling of photonic neural networks","authors":"T. F. de Lima, B. Shastri, M. Nahmias, A. Tait, P. Prucnal","doi":"10.1109/PHOSST.2016.7548808","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548808","url":null,"abstract":"Brain-inspired distributed computing has attracted attention for its energy-efficient processing, and photonic neuromorphic hardware can overcome latency vs. fan-in tradeoffs from neuromorphic electronics. Here, we introduce system-level, physically detailed modeling tools for photonic neural networks, and use them to study the behavior of attractor networks.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132621229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}