2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)最新文献

{"title":"Photoluminescence from tensile-strained Ge quantum dots","authors":"Qimiao Chen, Xiren Chen, Zhenpu Zhang, Yuxin Song, Peng Wang, Juanjuan Liu, P. Lu, Yaoyao Li, Q. Gong, Shumin Wang","doi":"10.1109/PHOSST.2016.7548749","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548749","url":null,"abstract":"Summary form only given. It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge, which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge. In this work, we chose In0.52Al0.48As, which is lattice matched to InP, as barrier layer and grew the structure by molecular beam epitaxy (MBE). Photoluminescence (PL) was successfully achieved at room temperature.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133995740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multicolor and white lasers from semiconductor nanomaterials","authors":"F. Fan, S. Turkdogan, C. Ning","doi":"10.1109/PHOSST.2016.7548762","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548762","url":null,"abstract":"We report on our recent research on demonstrating the simultaneous lasing in red, green and blue from a single monolithic nanosheet. The careful adjustment of relative output intensities of these elemental colors leads to an overall white appearance from a single laser structure. Larger tolerance to mismatch at nanoscale offers unique opportunity of growing monolithic semiconductor alloy structures of very dissimilar lattice constants and bandgaps. The wide range of available bandgaps from a single high quality nanostructure allow for simultaneous lasing in multiple colors such as red and green [1.2], or in all three elemental colors [3]. The flexibility of the materials and the structures allow the control of relative intensities of each individual colors, such that the overall color can appear as any visible colors in the triangular color gamut, especially as white. Such a monolithic multi-color or white laser can be potentially useful for many applications. In this talk, our recent efforts in growth and characterization of such unique nanostructures of alloy semiconductors to achieve lasing in white and multiple colors will be presented, together with demonstration of various lasing configurations. Some possible applications will be also discussed.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130460611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Light emission from silicon containing Sn-nanocrystals","authors":"S. Roesgaard, E. Talbot, J. Chevallier, J. L. Hansen, B. Julsgaard","doi":"10.1109/PHOSST.2016.7548539","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548539","url":null,"abstract":"This work investigates light emission from silicon with embedded Sn nanocrystals. The composition of the nanocrystals is determined to be pure Sn by atom probe tomography, and the light emission is strongest when the nanocrystal structure is closest to the host Si lattice diamond structure.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133380790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion","authors":"Eleonora Frau, G. Tutuncuoglu, F. Matteini, H. Potts, Rune Federiksen, Karen L. Martinez, A. Fontcuberta i Morral, E. Alarcón-Lladó","doi":"10.1109/PHOSST.2016.7548756","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548756","url":null,"abstract":"Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental methods as well as its use in other fields, such as bio-physics.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Are OAM states an optimal basis for spatially multiplexed free-space links?","authors":"J. Kahn, Guifang Li, Xiaoying Li, Ningbo Zhao","doi":"10.1109/PHOSST.2016.7548716","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548716","url":null,"abstract":"Orbital angular momentum (OAM) modes have been proposed for multiplexing information in fibers and free-space links. We show that OAM multiplexing does not realize the capacity limits of free-space channels, and is outperformed by multiplexing in parallel Gaussian beams or in any complete modal basis.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116373983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III-Y on silicon DFB laser arrays","authors":"D. Y. Thourhout, Y. Shi, B. Tian, Z. Wang, M. Pantouvaki, C. Merckling, B. Kunert, W. Guo, J. Van Campenhout","doi":"10.1109/PHOSST.2016.7548550","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548550","url":null,"abstract":"We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results of pure InP-based lasers emitting around 900nm and InGaAs-on-InP lasers emitting around 1300nm.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125511531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computing with dynamical systems in the post-CMOS era","authors":"A. Parihar, N. Shukla, S. Datta, A. Raychowdhury","doi":"10.1109/PHOSST.2016.7548777","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548777","url":null,"abstract":"In the pursuit for building hardware accelerators to compute optimization problems researchers realize that the challenges in achieving this objective lie not only in implementing the hardware but also in the formulating the computing fundamentals of such designs. Neural network algorithms are considered most suited for this task, as there is usually a direct description of distributed computing entities, called “neurons”, and their interactions which can be mapped to both electronic and non-electronic hardware. In this regard, coupled oscillator systems have been studied where individual oscillators correspond to neurons and the information is encoded in either phase or frequency. But as is the case with neural networks, the computational power of the network depends on complexity of interactions among oscillators, and it is a challenge to implement oscillator networks with complex simultaneous interactions among multiple oscillators. Sinusoidal oscillators with assumption of weak linear phase coupling, akin to Kumamoto models, have been studied in theory but implementing such oscillators with weak couplings and encoding information in phase or frequency have been a challenge. Examples of using novel devices for making neural network hardware include memristor based neuromorphic synapses [1] and spin-torque oscillator (STO) based systems [2]. In our work, we use relaxation oscillators coupled using passive elements - capacitances or resistances - without the assumption of weak linear phase couplings. Our theoretical models are derived from circuit implementations, instead of the other way round, which means there are only engineering challenges in implementing the hardware, and no modeling discrepancies. We have explored two kinds of implementations - (a) simple pairwise coupling scheme with information encoded as frequency for pattern matching and associative computing, and (b) complex global coupling with information encoded in phase for the NP-hard graph coloring problem. We have been demonstrated in theory, using simulations and experimental implementations using VO2 devices, the working of such coupled relaxation oscillator networks.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125887890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Generation of nonlinear optical light in lithium niobate nanowaveguides","authors":"A. Sergeyev, R. Grange","doi":"10.1109/PHOSST.2016.7548800","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548800","url":null,"abstract":"This paper will discuss the generation and waveguiding of the second harmonic generation (SHG) signal in the LiNbO3 nanowaveguides. SHG enhancement by modal phase-matching is demonstrated and the applicability of the LiNbO3 nanowaveguides for localized dye excitation is shown.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115263418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible nitride nanowire optoelectronic devices","authors":"M. Tchernycheva","doi":"10.1109/PHOSST.2016.7548760","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548760","url":null,"abstract":"Flexible devices are today a topic of intense research, motivated by their numerous applications (e.g. flexible light emitting diodes for rollable displays). The flexible technology is dominated by organic semiconductors integrated on lightweight and flexible plastic substrates. Taking the example of light emitters, organic devices possess many advantages, but present severe limitations in the short wavelength range. Blue organic light emitting diodes suffer from rather low external quantum efficiency and a limited lifetime, while blue light emitting diodes based on nitride semiconductors reveal high brightness and efficiency. However, difficulties exist in the fabrication of flexible devices with conventional thin film structure. In this context, nitride nanowires offer an elegant solution to the problem. Single nanowires and nanowire array LEDs based on InGaN/GaN core/shell heterostructures have been successfully demonstrated on rigid substrates, showing excellent performances in the blue spectral range, thanks to their high crystalline quality and non-polar active region.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128553830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"100 Mb/s wavelength division multiplexing visible light communications link using a triple-junction photo-diode","authors":"A. Gómez, H. Chun, S. Rajbhandari, G. Faulkner, D. O’brien, Katherine L. Cameron, Aravind V. N. Jalajakumari, R. Henderson","doi":"10.1109/PHOSST.2016.7548715","DOIUrl":"https://doi.org/10.1109/PHOSST.2016.7548715","url":null,"abstract":"We report the experimental realization of a 100 Mb/s wavelength division multiplexing link using commercial visible LED sources and a triple-junction photo-diode receiver. This is the first demonstration where multiple-junction technology is used for Visible Light Communication, showing its potential as a compact wavelength-selective transceiver.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128214364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}