硅DFB激光阵列

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI:10.1109/PHOSST.2016.7548550

D. Y. Thourhout, Y. Shi, B. Tian, Z. Wang, M. Pantouvaki, C. Merckling, B. Kunert, W. Guo, J. Van Campenhout

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引用次数: 0

摘要

我们将介绍我们在硅DFB激光器阵列上外延生长III-V的工作，包括发射约900nm的纯inp基激光器和发射约1300nm的inp上的ingaas激光器的结果。

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III-Y on silicon DFB laser arrays

We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results of pure InP-based lasers emitting around 900nm and InGaAs-on-InP lasers emitting around 1300nm.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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