Flexible nitride nanowire optoelectronic devices

M. Tchernycheva
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引用次数: 0

Abstract

Flexible devices are today a topic of intense research, motivated by their numerous applications (e.g. flexible light emitting diodes for rollable displays). The flexible technology is dominated by organic semiconductors integrated on lightweight and flexible plastic substrates. Taking the example of light emitters, organic devices possess many advantages, but present severe limitations in the short wavelength range. Blue organic light emitting diodes suffer from rather low external quantum efficiency and a limited lifetime, while blue light emitting diodes based on nitride semiconductors reveal high brightness and efficiency. However, difficulties exist in the fabrication of flexible devices with conventional thin film structure. In this context, nitride nanowires offer an elegant solution to the problem. Single nanowires and nanowire array LEDs based on InGaN/GaN core/shell heterostructures have been successfully demonstrated on rigid substrates, showing excellent performances in the blue spectral range, thanks to their high crystalline quality and non-polar active region.
柔性氮化纳米线光电器件
由于其众多应用(例如用于可卷曲显示器的柔性发光二极管),柔性器件成为当今研究的热点。柔性技术以集成在轻量化柔性塑料衬底上的有机半导体为主导。以发光器件为例,有机器件具有许多优点,但在短波长范围内存在严重的局限性。蓝色有机发光二极管的外量子效率较低,寿命有限,而基于氮化半导体的蓝色发光二极管具有较高的亮度和效率。然而,传统薄膜结构柔性器件的制备存在一定的困难。在这种情况下,氮化纳米线为这个问题提供了一个优雅的解决方案。基于InGaN/GaN核/壳异质结构的单纳米线和纳米线阵列led已经成功地在刚性衬底上展示,由于其高晶体质量和非极性活性区,在蓝色光谱范围内表现出优异的性能。
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