George T. Wang, Changyi Li, Sheng Liu, Jeremy B. Wright, B. Leung, D. Koleske, J. Figiel, T. Luk, I. Brener, G. Balakrishnan, S. Brueck
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Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning.
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