III-V integration on Si for photonics

Abstract

A new approach based on III-V-Si nanocomposite is under development, which may overcome most of those problems. This paper reviews some of the major initial results gained within the last few years towards a full optoelectronic silicon based integration platform. This approach is based on the growth of III-V quantum dots (QDs) directly grown on either planar silicon or on patterned surfaces. Based on a GaAs/InAs core-shell geometry high quality optical emission could be obtained. By overgrowing InAs QDs with silicon a defect free single crystal planar silicon layer can be formed with embedded InAs nano clusters. Transmission electron microscope investigations show that the nanoclusters fully relax by closed loop interface dislocations but without initiating threading dislocations in the silicon matrix.