高密度氮化镓纳米线阵列在Si(111)上的选择性面积生长

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI:10.1109/PHOSST.2016.7548763

C. H. Wu, P. Y. Lee, K. Y. Chen, K. Cheng

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引用次数: 1

摘要

研究了等离子体辅助分子束外延在Si(111)衬底上高密度GaN纳米线的选择性面积生长。采用纳米压印光刻技术制备了作为纳米线生长种子的氮化铝纳米片。六边形截面的GaN纳米线在3.457eV下具有较强的谐振发射，光学质量最好。

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Selective area growth of high-density GaN nanowire arrays on Si(111)

Selective-area growth of high-density GaN nanowires on Si(111) substrate by plasma-assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross-section show the best optical quality with a strong resonant emission at 3.457eV.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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