光子应用中基于砷化镓纳米膜的量子异质结构

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI:10.1109/PHOSST.2016.7548759

G. Tutuncuoglu, M. Friedl, M. de la Mata, D. Deianae, Jean-Baptiste Leran, H. Potts, F. Matteini, J. Arbiol, A. Fontcuberta i Morral

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引用次数: 0

摘要

III-V纳米结构是未来光电子应用的重要组成部分。为了开发III-V纳米结构的独特性质，如高载流子迁移率，高自旋轨道相互作用和各种应用的最佳带隙，人们需要能够生长具有高结晶度和所需尺寸和构型的纳米结构。

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Quantum heterostructures based on GaAs nanomembranes for photonic applications

III-V nanostructures are promising building blocks for future optoelectronics applications. In order to exploit the unique properties of the III-V nanostructures such as high carrier mobility, high spin-orbit interaction and optimum band-gap for various applications one needs to be able to grow nanostructures with high crystallinity and desired dimensions and configurations.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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